FGH40N60UFTU Fairchild Semiconductor, FGH40N60UFTU Datasheet - Page 5

• Manufacturer Part Number: FGH40N60UFTU
• Description: IGBT FIELD STOP 600V 80A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH40N60UFTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 290W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 80 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH40N60UF Rev. B
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Figure 15. Turn-off Characteristics vs.
Figure 17. Switching Loss vs. Collector Current
1000
5500
100
100
600
0.1
10
10
10
1
0
20
20
Common Emitter
V
I
T
T
C
Common Emitter
V
T
T
C
C
Common Emitter
V
T
T
CC
C
C
= 40A
C
C
GE
GE
= 25
= 125
Gate Resistance
Collector Current
= 25
= 125
= 400V, V
= 25
= 125
= 15V, R
= 15V, R
o
10
C
o
o
o
C
C
C
o
o
C
C
Gate Resistance, R
Collector Current, I
Collector Current, I
GE
G
G
= 10
= 10
40
40
= 15V
20
Ω
Ω
30
G
C
60
60
[
C
t
Ω
[A]
d(off)
[A]
]
t
f
t
40
f
t
d(off)
E
E
on
off
50
80
80
5
Figure 16. Switching Loss vs. Gate Resistance
Figure 18. Turn off Switching
Figure 14. Turn-on Characteristics vs.
100
500
200
100
0.3
10
10
10
1
1
20
0
1
Common Emitter
V
T
T
Common Emitter
V
I
T
T
C
GE
C
C
CC
C
C
Safe Operating Area
V
= 40A
GE
= 25
= 125
= 25
= 125
= 15V, R
= 400V, V
= 15V, T
Collector-Emitter Voltage, V
o
o
10
C
C
o
o
C
C
Collector Current, I
Gate Resistance, R
G
Collector Current
GE
C
= 10
40
10
= 125
= 15V
SOA Characteristics
20
Ω
o
C
30
C
100
60
G
[A]
[
E
Ω
off
]
E
CE
on
40
[V]
t
d(on)
t
r
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1000
50
80