FGA25N120ANTDTU Fairchild Semiconductor, FGA25N120ANTDTU Datasheet - Page 3

• Manufacturer Part Number: FGA25N120ANTDTU
• Description: IGBT NPT TRENCH 1200V 50A TO3P
• Manufacturer: Fairchild Semiconductor

Specifications of FGA25N120ANTDTU

• Igbt Type: NPT and Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 312W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 (Straight Leads)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 50 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 312 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 50 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 50A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FGA25N120ANTDTU_NL; FGA25N120ANTDTU_NL

FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
Electrical Characteristics of DIODE
V
t
I
Q
Symbol
rr
rr
FM
rr
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Cur-
rent
Diode Reverse Recovery Charge
Parameter
I
dI/dt = 200 A/µs
I
F
F
= 25A
= 25A
T
C
= 25°C unless otherwise noted
Test Conditions
3
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
Min.
--
--
--
--
--
--
--
--
Typ.
3130
4650
235
300
2.0
2.1
27
31
Max.
4700
350
3.0
40
--
--
--
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Units
nC
ns
V
A