FGA25N120ANTDTU Fairchild Semiconductor, FGA25N120ANTDTU Datasheet - Page 4
FGA25N120ANTDTU
Manufacturer Part Number
FGA25N120ANTDTU
Description
IGBT NPT TRENCH 1200V 50A TO3P
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGA25N120ANTDTU.pdf
(9 pages)
Specifications of FGA25N120ANTDTU
Igbt Type
NPT and Trench
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 25A
Current - Collector (ic) (max)
50A
Power - Max
312W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-3P-3 (Straight Leads)
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
50 A
Gate-emitter Leakage Current
+/- 250 nA
Power Dissipation
312 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
50 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
50A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-3PN
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FGA25N120ANTDTU_NL
FGA25N120ANTDTU_NL
FGA25N120ANTDTU_NL
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FGA25N120ANTDTU
Manufacturer:
Fairchild Semiconductor
Quantity:
1 877
Company:
Part Number:
FGA25N120ANTDTU
Manufacturer:
Fairchi/ON
Quantity:
16 000
Part Number:
FGA25N120ANTDTU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FGA25N120ANTDTU-F109
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FGA25N120ANTDTU_F109
Manufacturer:
FSC
Quantity:
4 500
FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Saturation Voltage vs. Case
Figure 5. Saturation Voltage vs. V
180
160
140
120
100
3.0
2.5
2.0
1.5
20
16
12
80
60
40
20
8
4
0
0
25
0
0
T
Common Emitter
V
Temperature at Variant Current Level
C
GE
= 25
= 15V
°
I
C
C
= 12.5A
4
2
Collector-Emitter Voltage, V
Gate-Emitter Voltage, V
50
Case Temperature, T
17V
20V
8
4
40A
25A
15V 12V
75
12
6
C
GE
[
°
Common Emitter
T
C]
[V]
CE
100
C
I
= 25
C
[V]
16
= 25A
GE
8
40A
°
C
V
GE
= 6V
10V
9V
8V
7V
125
20
10
4
Figure 2. Typical Saturation Voltage
Figure 4. Saturation Voltage vs. V
Figure 6. Saturation Voltage vs. V
120
100
80
60
40
20
20
16
12
20
16
12
0
8
4
0
8
4
0
0
0
0
Characteristics
Common Emitter
V
T
T
C
C
GE
= 25
= 125
= 15V
I
C
°
°
I
C
C
C
= 12.5A
1
4
4
Collector-Emitter Voltage, V
= 12.5A
Gate-Emitter Voltage, V
Gate-Emitter Voltage, V
2
8
8
40A
25A
40A
25A
12
12
3
GE
GE
CE
Common Emitter
T
Common Emitter
T
[V]
[V]
C
C
[V]
= -40
= 125
GE
GE
16
16
4
°
www.fairchildsemi.com
C
°
C
20
20
5