FGA20N120FTDTU Fairchild Semiconductor, FGA20N120FTDTU Datasheet - Page 5

• Manufacturer Part Number: FGA20N120FTDTU
• Description: IGBT TRENCH 20A 1200V TO-3PN
• Manufacturer: Fairchild Semiconductor

Specifications of FGA20N120FTDTU

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 40A
• Gate To Emitter Voltage (max): ±25V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGA20N120FTD Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Gate charge Characteristics
Figure 11. Turn-on Characteristics vs.
100
300
20
16
12
15
12
10
8
4
0
9
6
3
0
0
0
0
Common Emitter
T
C
Gate Resistance
= 25
o
30
4
20
C
Gate-Emitter Voltage, V
I
t
C
d(on)
t
Gate Resistance, R
r
= 10A
Gate Charge, Q
60
8
40
V
CC
= 200V
Common Emitter
V
I
T
T
20A
C
12
C
C
90
CC
60
= 20A
g
= 25
= 125
[nC]
= 600V, V
Common Emitter
T
G
C
40A
400V
GE
o
= 125
[ Ω ]
C
o
C
[V]
GE
600V
120
16
80
o
GE
C
= 15V
150
20
100
5
Figure 8. Capacitance Characteristics
Figure 10. SOA Characteristics
0.01
Figure 12. Turn-off Characteristics vs.
1000
5000
4000
3000
2000
1000
2000
100
0.1
100
10
70
1
0
1
0
1
*Notes:
Common Emitter
V
I
T
T
C
C
C
1. T
2. T
3. Single Pulse
CC
= 20A
= 25
= 125
= 600V, V
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
C
J
Gate Resistance
= 150
= 25
o
20
C
o
C
Gate Resistance, R
o
C
o
10
C
C
GE
C
C
ies
res
oes
= 15V
40
100
60
Common Emitter
V
T
G
C
GE
10
[ Ω ]
= 25
= 0V, f = 1MHz
CE
CE
o
t
[V]
t
1ms
10 ms
C
100
f
10
DC
d(off)
80
[V]
µ
µ
s
1000
s
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2000
100
30