FGA20N120FTDTU Fairchild Semiconductor, FGA20N120FTDTU Datasheet - Page 7

• Manufacturer Part Number: FGA20N120FTDTU
• Description: IGBT TRENCH 20A 1200V TO-3PN
• Manufacturer: Fairchild Semiconductor

Specifications of FGA20N120FTDTU

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 40A
• Gate To Emitter Voltage (max): ±25V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGA20N120FTD Rev. A
Typical Performance Characteristics
Figure 19. Reverse Recovery Current
Figure 21.Reverse Recovery Time
1000
800
600
400
200
60
50
40
30
20
10
0
0
5
5
10
10
Forward Current, I
Forward Current, I
di/dt = 100A/
1E-3
0.01
0.1
1
1E-5
15
15
200A/
single pulse
0.05
0.02
0.01
0.5
0.1
0.2
µ
s
di/dt = 100A/
200A/
µ
F
F
s
[A]
[A]
µ
Figure 22.Transient Thermal Impedance of IGBT
20
s
1E-4
20
µ
s
25
Rectangular Pulse Duration [sec]
25
1E-3
Figure 20. Stored Charge
7
0.01
15000
12000
9000
6000
3000
0
5
0.1
Duty Factor, D = t1/t2
Peak T
P
DM
10
Forward Current, I
j
= Pdm x Zthjc + T
t
1
200A/
t
1
2
µ
15
s
di/dt = 100A/
F
C
10
[A]
20
µ
s
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25