APT100GN120B2G Microsemi Power Products Group, APT100GN120B2G Datasheet
APT100GN120B2G
Manufacturer Part Number
APT100GN120B2G
Description
IGBT 1200V 245A 960W TMAX
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT100GN120B2G.pdf
(6 pages)
Specifications of APT100GN120B2G
Igbt Type
Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 100A
Current - Collector (ic) (max)
245A
Power - Max
960W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
T-MAX
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT100GN120B2GMI
APT100GN120B2GMI
APT100GN120B2GMI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT100GN120B2G
Manufacturer:
MSC
Quantity:
445
Part Number:
APT100GN120B2G
Manufacturer:
APT
Quantity:
20 000
TYPICAL PERFORMANCE CURVES
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive V
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifi es gate drive design and minimizes losses.
•
• Trench Gate: Low V
• Easy Paralleling
• Integrated Gate Resistor: Low EMI, High Reliability
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
1200V Field Stop
SSOA
R
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
G(int)
T
CES
CM
C1
C2
GE
CE(ON)
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
and are ideal for low frequency applications that require absolute minimum
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Integrated Gate Resistor
CE(ON)
CE(on)
temperature coeffi cient. A built-in gate resistor ensures
1
(V
CE
CE
CE
= V
= 1200V, V
= 1200V, V
GE
GE
C
C
GE
GE
J
= 25°C
= 110°C
= 15V, I
= 15V, I
= 150°C
, I
= ±20V)
C
GE
= 4mA, T
GE
GE
C
C
= 0V, I
8
8
= 100A, T
= 100A, T
= 0V, T
= 0V, T
j
C
= 25°C)
= 4mA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
= 25°C unless otherwise specifi ed.
1200
MIN
5.0
1.4
APT100GN120B2
300A @ 1200V
APT100GN120B2G*
-55 to 150
APT100GN120B2
1200
TYP
±30
245
100
300
960
300
5.8
1.7
2.0
7.5
1200V
APT100GN120B2
G
G
C
MAX
TBD
100
600
E
6.5
2.1
T-Max
®
®
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA
Ω
Related parts for APT100GN120B2G
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
IGBT 600V 100A 463W TO247
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
IGBT 600V 198A 833W TO264
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
IGBT 600V 41A 187W TO247
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
MOSFET N-CH 600V 23A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
MOSFET N-CH 500V 17A TO-220
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
MOSFET N-CH 1200V 3.5A TO-220
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
MOSFET N-CH 500V 22A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
MOSFET N-CH 100V 75A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
MOSFET N-CH 200V 56A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
MOSFET N-CH 500V 27A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
MOSFET N-CH 300V 40A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
MOSFET N-CH 200V 59A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
MOSFET N-CH 500V 26A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
MOSFET N-CH 300V 40A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
MOSFET N-CH 200V 65A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT100GN120B2G Summary of contents
Page 1
... 1200V 0V 25° 1200V 0V 125° ±20V) GE 1200V APT100GN120B2 APT100GN120B2 APT100GN120B2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. T-Max 25°C unless otherwise specifi ed. C APT100GN120B2 1200 ±30 245 100 300 300A @ 1200V 960 -55 to 150 300 MIN TYP MAX 1200 5 ...
Page 2
DYNAMIC CHARACTERISTICS Characteristic Symbol C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP Q 3 Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc SSOA Switching ...
Page 3
TYPICAL PERFORMANCE CURVES 300 V = 15V -55°C J 250 T = 25°C J 200 T = 125°C J 150 T = 175°C J 100 1.0 2.0 3 COLLECTOR-TO-EMITTER VOLTAGE (V) CE ...
Page 4
V = 15V 800V 25°C or 125° 1.0Ω 100µ 100 130 160 I , COLLECTOR TO EMITTER ...
Page 5
TYPICAL PERFORMANCE CURVES 10,000 5,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0. 0.9 0.12 0.7 0.10 0.08 0.5 0.06 0.3 0.04 0.1 0.05 0.02 0 ...
Page 6
APT100DQ120 D.U.T. Figure 21, Inductive Switching Test Circuit 90% Gate Voltage t d(off) 90% Collector Voltage t f 10% 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Defi nitions Microsemi’s ...