APT100GN120B2G Microsemi Power Products Group, APT100GN120B2G Datasheet - Page 2

• Manufacturer Part Number: APT100GN120B2G
• Description: IGBT 1200V 245A 960W TMAX
• Manufacturer: Microsemi Power Products Group

Specifications of APT100GN120B2G

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 100A
• Current - Collector (ic) (max): 245A
• Power - Max: 960W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT100GN120B2GMI; APT100GN120B2GMI

DYNAMIC CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
7 R
8 Continuous Current limited by package lead temperature.
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Symbol
SSOA
V
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in fi gure 21, but with a Silicon Carbide diode.
loss. (See Figures 21, 22.)
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
t
t
t
t
C
E
E
E
E
R
R
C
C
Q
Q
d(on)
d(off)
E
d(on)
d(off)
E
Q
W
on1
on2
off
GEP
G
on1
on2
on1
on2
oes
t
t
t
t
θ
θ
res
ies
off
off
ge
gc
r
r
f
f
g
JC
JC
is external gate resistance, not including R
T
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
ces
includes both IGBT and FRED leakages
3
6
4
4
66
4
G(int)
55
5
nor gate driver impedance. (MIC4452)
T
15V, L = 100µH,V
Inductive Switching (125°C)
J
Inductive Switching (25°C)
= 150°C, R
V
GE
Test Conditions
Capacitance
Gate Charge
T
= 0V, V
V
R
V
R
V
T
V
V
V
f = 1 MHz
I
I
I
J
CE
CC
CC
G
J
G
C
C
C
GE
GE
GE
= +125°C
= +25°C
= 1.0Ω
= 1.0Ω
= 100A
= 100A
= 100A
= 600V
G
= 800V
= 800V
= 15V
= 15V
= 15V
= 4.3Ω
CE
CE
= 25V
7
7
= 1200V
7
, V
GE
=
MIN
300
MIN
6500
TYP
365
280
540
295
615
105
725
210
9.5
9.5
TYP
50
50
50
11
15
50
50
12
22
14
6.1
APT100GN120B2
MAX
MAX
N/A
.13
UNIT
UNIT
°C/W
m
m
nC
pF
gm
ns
ns
V
A
J
J