APT100GN120B2G Microsemi Power Products Group, APT100GN120B2G Datasheet - Page 4

• Manufacturer Part Number: APT100GN120B2G
• Description: IGBT 1200V 245A 960W TMAX
• Manufacturer: Microsemi Power Products Group

Specifications of APT100GN120B2G

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 100A
• Current - Collector (ic) (max): 245A
• Power - Max: 960W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT100GN120B2GMI; APT100GN120B2GMI

100,000
80,000
60,000
40,000
20,000
80,000
60,000
40,000
20,000
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 13, Turn-On Energy Loss vs Collector Current
250
200
150
100
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 9, Turn-On Delay Time vs Collector Current
60
50
40
30
20
10
50
0
0
0
0
I
I
10
CE
10
CE
10
I
0
CE
V
V
T
V
V
R
V
T
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
R
, COLLECTOR TO EMITTER CURRENT (A)
J
CE
GE
CE
GE
G
E
J
CE
G
, COLLECTOR TO EMITTER CURRENT (A)
= 125°C
G
off,
= 25°C
= 1.0Ω
= 1.0Ω
= 800V
= 800V
= +15V
= +15V
= 800V
40
=
40
40
200A
R
1.0Ω, L
G
V
, GATE RESISTANCE (OHMS)
,
GE
or 125°C
5
70
70
70
E
= 15V
=
off,
100
100A
100
T
100
100
µ
T
J
H, V
J
=
=
10
125°C
25 or 125°C,V
CE
130
130
130
E
=
off,
800V
T
50A
E
J
on2,
160
160
160
=
25°C
15
200A
GE
E
E
190
190
190
on2,
=
on2,
15V
100A
50A
220
220
220
20
FIGURE 16, Switching Energy Losses vs Junction Temperature
30,000
25,000
20,000
15,000
10,000
80,000
60,000
40,000
20,000
FIGURE 14, Turn Off Energy Loss vs Collector Current
1000
5000
800
600
400
200
FIGURE 10, Turn-Off Delay Time vs Collector Current
250
200
150
100
FIGURE 12, Current Fall Time vs Collector Current
50
0
0
0
0
I
I
10
10
10
CE
CE
I
0
CE
R
V
V
R
V
V
R
V
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
GE
G
CE
GE
G
G
E
CE
, COLLECTOR TO EMITTER CURRENT (A)
G
= 1.0Ω
off,
= 1.0Ω
=
=
= 800V
= 800V
= +15V
T
= +15V
=
40
V
40
40
200A
1.0Ω, L
J
1.0Ω
GE
800V
, JUNCTION TEMPERATURE (°C)
25
T
=15V,T
E
J
off,
70
70
=
70
=
125°C
100A
100
J
=125°C
T
50
100
J
µ
100
100
T
T
H, V
=
J
J
V
=
=
25°C, V
GE
CE
125°C, V
25°C
=15V,T
130
130
130
=
75
800V
GE
E
on2,
J
GE
160
=
=25°C
160
160
E
15V
on2,
50A
=
100
15V
E
200A
on2,
APT100GN120B2
190
190
190
E
off,
100A
50A
220
220
220
125