APT100GN120B2G Microsemi Power Products Group, APT100GN120B2G Datasheet - Page 5

• Manufacturer Part Number: APT100GN120B2G
• Description: IGBT 1200V 245A 960W TMAX
• Manufacturer: Microsemi Power Products Group

Specifications of APT100GN120B2G

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 100A
• Current - Collector (ic) (max): 245A
• Power - Max: 960W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT100GN120B2GMI; APT100GN120B2GMI

Dissipated Power
TYPICAL PERFORMANCE CURVES
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
(Watts)
10,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
5,000
1,000
0.14
0.12
0.10
0.08
0.06
0.04
0.02
500
100
V
0
CE
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
D = 0.9
T
10
J
(°C)
0.05
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.00088
0.0273
20
10
0.0233
-4
30
0.0558
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
EXT
are the external thermal
40
0.649
RECTANGULAR PULSE DURATION (SECONDS)
0.0467
C
C
C
ies
oes
res
T
SINGLE PULSE
C
50
(°C)
10
-3
Figure 20, Operating Frequency vs Collector Current
50
40
30
20
10
0
20 40 60
T
T
D = 50 %
V
R
J
C
CE
G
10
= 125
= 75
= 1.0Ω
350
300
250
200
150
100
= 800V
-2
Figure 18,Minimim Switching Safe Operating Area
50
0
°
I
°
C
C
0
C
, COLLECTOR CURRENT (A)
V
CE
200
, COLLECTOR TO EMITTER VOLTAGE
80 100 120 140 160 180 200
400
Note:
Peak T J = P DM x Z θJC + T C
600
10
Duty Factor D =
-1
800
t 1
t 2
1000 1200 1400
t 1
/
APT100GN120B2
t 2
F
f
f
P
max1
max2
max
diss
1.0
=
= min (f
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
+ t
max
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f