HGTD1N120BNS9A Fairchild Semiconductor, HGTD1N120BNS9A Datasheet - Page 3

• Manufacturer Part Number: HGTD1N120BNS9A
• Description: IGBT NPT N-CH 1200V 5.3A TO252AA
• Manufacturer: Fairchild Semiconductor

Specifications of HGTD1N120BNS9A

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 1A
• Current - Collector (ic) (max): 5.3A
• Power - Max: 60W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Electrical Specifications
NOTES:
Typical Performance Curves
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
Thermal Resistance Junction To Case
4. Turn-Off Energy Loss (E
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
FIGURE 1. DC COLLECTOR CURRENT vs CASE
at the point where the collector current equals zero (I
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
6
5
4
3
2
1
0
25
PARAMETER
TEMPERATURE
50
T
C
, CASE TEMPERATURE (
OFF
75
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
T
C
= 25
100
o
C, Unless Otherwise Specified (Continued)
(Unless Otherwise Specified)
o
SYMBOL
C)
t
t
t
t
d(OFF)I
d(OFF)I
E
E
E
E
d(ON)I
E
d(ON)I
E
R
ON1
ON2
ON1
ON2
125
OFF
OFF
t
t
t
t
θJC
rI
fI
rI
fI
V
GE
CE
= 15V
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
IGBT and Diode at T
I
V
V
R
L = 4mH
Test Circuit (Figure 18)
IGBT and Diode at T
I
V
V
R
L = 4mH
Test Circuit (Figure 18)
150
CE
CE
GE
GE
CE
CE
G
G
= 82 Ω
= 82 Ω
= 1.0A
= 1.0 A
= 960V
= 15V
= 960V
= 15V
TEST CONDITIONS
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
J
J
7
6
5
4
3
2
1
0
= 25
= 150
0
T
J
o
= 150
C
o
C
200
V
J
CE
as the IGBT. The diode type is specified in Figure 18.
o
C, R
, COLLECTOR TO EMITTER VOLTAGE (V)
ON1
400
G
is the turn-on loss of the IGBT only. E
= 82Ω, V
MIN
600
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GE
= 15V, L = 2mH
HGTD1N120BNS, HGTP1N120BN Rev. B
800
TYP
226
172
258
145
385
120
15
11
67
70
90
13
11
75
-
1000
MAX
300
187
123
370
440
175
2.1
20
14
76
17
15
88
-
-
1200
UNITS
o
ON2
C/W
ns
ns
ns
ns
µJ
µJ
µJ
ns
ns
ns
ns
µJ
µJ
µJ
1400
is