HGTD1N120BNS9A Fairchild Semiconductor, HGTD1N120BNS9A Datasheet - Page 6

• Manufacturer Part Number: HGTD1N120BNS9A
• Description: IGBT NPT N-CH 1200V 5.3A TO252AA
• Manufacturer: Fairchild Semiconductor

Specifications of HGTD1N120BNS9A

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 1A
• Current - Collector (ic) (max): 5.3A
• Power - Max: 60W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
Test Circuit and Waveforms
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
350
300
250
200
150
100
50
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
0
0
C
0.005
0.01
R
2.0
1.0
0.1
RES
C
G
IES
VOLTAGE
10
= 82Ω
V
CE
-5
0.05
0.02
0.01
, COLLECTOR TO EMITTER VOLTAGE (V)
5
0.5
0.2
0.1
C
OES
SINGLE PULSE
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
10
RHRD4120
L = 4mH
10
15
-4
FREQUENCY = 1MHz
+
-
(Unless Otherwise Specified) (Continued)
V
20
DD
= 960V
t
1
, RECTANGULAR PULSE DURATION (s)
10
25
-3
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
t
V
I
d(OFF)I
6
5
4
3
2
1
0
V
CE
CE
GE
0
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, T
10
FIGURE 19. SWITCHING TEST WAVEFORMS
-2
V
CE
2
, COLLECTOR TO EMITTER VOLTAGE (V)
t
DUTY FACTOR, D = t
fI
PEAK T
90%
E
OFF
4
J
90%
P
C
D
= (P
10%
= 110
V
10
GE
HGTD1N120BNS, HGTP1N120BN Rev. B
-1
D
= 15V
X Z
o
C
t
1
θJC
t
6
2
1
/ t
X R
2
θJC
E
10%
) + T
ON2
V
V
8
GE
GE
C
t
d(ON)I
= 12V
= 10V
10
0
t
rI
I
CE
10