HGTG30N60B3 Fairchild Semiconductor, HGTG30N60B3 Datasheet - Page 6

• Manufacturer Part Number: HGTG30N60B3
• Description: IGBT UFS N-CHAN 600V 60A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG30N60B3

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 30A
• Current - Collector (ic) (max): 60A
• Power - Max: 208W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 208 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 208W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Typical Performance Curves
Test Circuit and Waveforms
©2004 Fairchild Semiconductor Corporation
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
10
10
10
-2
R
-1
0
10
G
-5
0.05
0.02
= 3
0.50
0.20
0.10
0.01
SINGLE PULSE
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
10
-4
L = 1mH
HGTG30N60B3D
+
-
Unless Otherwise Specified (Continued)
V
DD
10
-3
= 480V
t
1
, RECTANGULAR PULSE DURATION (s)
10
-2
V
V
I
CE
GE
CE
DUTY FACTOR, D = t
PEAK T
FIGURE 18. SWITCHING TEST WAVEFORMS
J
= (P
D
t
10
d(OFF)I
X Z
90%
-1
10%
JC
1
/ t
X R
t
fI
2
JC
) + T
E
OFF
90%
C
10
P
0
D
E
ON2
10%
t
t
d(ON)I
1
t
HGTG30N60B3 Rev. B3
2
t
rI
10
1