HGTG30N60B3 Fairchild Semiconductor, HGTG30N60B3 Datasheet - Page 8

IGBT UFS N-CHAN 600V 60A TO-247

HGTG30N60B3

Manufacturer Part Number
HGTG30N60B3
Description
IGBT UFS N-CHAN 600V 60A TO-247
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of HGTG30N60B3

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 30A
Current - Collector (ic) (max)
60A
Power - Max
208W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.45 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
60 A
Gate-emitter Leakage Current
+/- 250 nA
Power Dissipation
208 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
60 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Transistor Type
IGBT
Dc Collector Current
60A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
208W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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As used herein:
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systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
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Definition of Terms
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C™
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Rev. I13

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