FGH80N60FDTU Fairchild Semiconductor, FGH80N60FDTU Datasheet - Page 6

• Manufacturer Part Number: FGH80N60FDTU
• Description: IGBT 600V 80A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH80N60FDTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 290W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 80 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH80N60FD Rev. A2
Typical Performance Characteristics
Figure 13. Turn-Off Characteristics vs.
Figure 15. Turn-Off Characteristics vs.
Figure 17. Switching Loss vs Collector Current
1000
2000
100
100
500
10
0.1
10
20
1
0
20
20
Common Emitter
V
I
T
T
C
C
C
CC
Common Emitter
V
T
T
Common Emitter
V
T
T
= 40A
C
C
GE
C
C
= 25
= 125
GE
Gate Resistance
Collector Current
= 400V, V
= 25
= 125
= 25
= 125
= 15V, R
= 15V, R
o
C
10
o
o
o
C
C
C
o
o
Gate Resistance, R
C
C
Collector Current, I
Collector Current, I
GE
G
G
= 10
40
= 10
40
= 15V
20


30
G
C
60
60
[
C

[A]
[A]
]
t
d(off)
40
t
t
f
d(off)
E
t
E
f
on
off
50
80
80
(Continued)
6
Figure 16. Switching Loss vs Gate Resistance
100
200
10
Figure 14. Turn-On Characteristics vs.
0.3
5
1
20
0
Common Emitter
V
T
T
Common Emitter
V
I
T
T
C
C
C
GE
CC
C
C
= 40A
= 25
= 125
= 25
= 125
= 15V, R
= 400V, V
o
o
10
C
o
C
o
C
C
Collector Current, I
Gate Resistance, R
G
GE
= 10
40
Collector Current
= 15V

20
30
C
60
G
[A]
[
E

off
]
E
on
40
t
d(on)
t
r
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80
50