FGH80N60FDTU Fairchild Semiconductor, FGH80N60FDTU Datasheet - Page 7

• Manufacturer Part Number: FGH80N60FDTU
• Description: IGBT 600V 80A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH80N60FDTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 290W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 80 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH80N60FD Rev. A2
Typical Performance Characteristics
Figure 19. Typical Forward Voltage Drop
Figure 21. Reverse Recovery Time
100
140
120
100
0.1
10
80
60
40
20
1
100
0
5
T
C
= 125
o
1
Forward Voltage , V
C
125
200
25
1E-3
0.01
o
o
0.1
di/dt, [A/
C
C
1
1E-5
T
single pulse
C
0.02
0.01
0.05
2
0.5
0.2
0.1
= 25
Figure 18. Transient Thermal Impedance of IGBT

s]
o
C
300
F
T
[V]
C
1E-4
3
= 75
o
C
Rectangular Pulse Duration [sec]
400
4
1E-3
(Continued)
7
Figure 22. Reverse Recovery Current
Figure 20. Stored Charge
0.01
20
15
10
600
500
400
300
200
100
5
0
100
0
5
100
Duty Factor, D = t1/t2
Peak T
P
DM
j
= Pdm x Zthjc + T
0.1
125
200
t
200
25
1
t
2
o
o
di/dt, [A/
di/dt ,[A/
C
C
125
25
o
o
C
C
C


s]
s]
1
300
300
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400
400