HGTG10N120BND Fairchild Semiconductor, HGTG10N120BND Datasheet - Page 4

• Manufacturer Part Number: HGTG10N120BND
• Description: IGBT N-CH NPT 1200V 35A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG10N120BND

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 10A
• Current - Collector (ic) (max): 35A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 17 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 298 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 35 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 35A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 298W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HGTG30N60C3D
HGTG40N60C3_R4752
HGTG7N60A4D
HUF75345G3
HUF75852G3
ISL9K30120G3
ISL9R18120G2
ISL9R3060G2
RHRG30120
RHRG5060
RURG3020CC
RURG5060
RURG8060
HGTG40N60A4
HGTG5N120BND
HUF75339G3
HUF75639G3
ISL9K1560G3
ISL9K3060G3
ISL9R2480G2_S2611
RFG70N06
RHRG3060
RHRG75120
RURG3060
RURG5060_R4857
HGTG40N60B3
HGTG7N60A4
HUF75344G3
HUF75652G3
ISL9K18120G3
ISL9R1560G2
ISL9R30120G2
RHRG1560CC
RHRG3060CC
RURG1520CC
RURG3060CC
RURG80100
Pg. 4