HGTG20N60B3D Fairchild Semiconductor, HGTG20N60B3D Datasheet

IGBT N-CH UFS 600V 20A TO-247

HGTG20N60B3D

Manufacturer Part Number
HGTG20N60B3D
Description
IGBT N-CH UFS 600V 20A TO-247
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of HGTG20N60B3D

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
165W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Type
IGBT
Dc Collector Current
40A
Collector Emitter Voltage Vces
2V
Power Dissipation Pd
165W
Collector Emitter Voltage V(br)ceo
600V
Transistor Case Style
TO-247
No. Of Pins
3
Svhc
No SVHC
Rohs Compliant
Yes
Operating Temperature Range
-40°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HGTG20N60B3D
Manufacturer:
MITSUBISHI
Quantity:
5 000
Part Number:
HGTG20N60B3D
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2001 Fairchild Semiconductor Corporation
40A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG20N60B3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. The device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
diode used in anti-parallel with the IGBT is the RHRP3060.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential.
Formerly developmental type TA49016.
Ordering Information
NOTE: When ordering, use the entire part number.
Symbol
HGTG20N60B3D
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
PART NUMBER
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
G
TO-247
PACKAGE
C
E
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
Data Sheet
G20N60B3D
o
C and 150
BRAND
o
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
C. The
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
Features
• 40A, 600V at T
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150
• Short Circuit Rated
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
December 2001
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
C
= 25
JEDEC STYLE TO-247
COLLECTOR
(BOTTOM SIDE METAL)
o
C
HGTG20N60B3D
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
E
HGTG20N60B3D Rev. B
C
G
4,587,713
4,644,637
4,801,986
4,883,767
o
C

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HGTG20N60B3D Summary of contents

Page 1

... Data Sheet 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor ...

Page 2

... 100 OFF 20A 20A, dI /dt = 100A 1A, dI /dt = 100A IGBT JC Diode = 0A) The HGTG20N60B3D was tested per JEDEC standard No. 24-1 Method for CE HGTG20N60B3D 600 CES 600 CGR 40 C25 20 C110 20 (AVG) 160 CM 20 GES 30 GEM 30A at 600V 165 D 1. -40 to 150 J STG 260 ...

Page 3

... DUTY CYCLE <0.5 COLLECTOR TO EMITTER VOLTAGE (V) CE FIGURE 2. SATURATION CHARACTERISTICS PULSE DURATION = 250 s DUTY CYCLE <0.5 15V - 150 COLLECTOR TO EMITTER VOLTAGE ( 600V 400V 200V g(REF GATE CHARGE (nC) G FIGURE 6. GATE CHARGE WAVEFORMS = 10V 8.5V = 8.0V = 7. 1.685mA 0 80 100 HGTG20N60B3D Rev. B ...

Page 4

... FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR 150 100 480V 15V COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 150 100 480V 15V COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 150 100 480V 15V COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT HGTG20N60B3D Rev ...

Page 5

... RECTANGULAR PULSE DURATION ( 150 C o 100 1.5 2.0 2.5 FIGURE 17. RECOVERY TIMES vs FORWARD CURRENT 120 150 15V 100 100 200 300 400 V , COLLECTOR TO EMITTER VOLTAGE (V) CE FIGURE 14. SWITCHING SAFE OPERATING AREA DUTY FACTOR PEAK /dt = 100A FORWARD CURRENT ( 500 600 700 ) + HGTG20N60B3D Rev. B ...

Page 6

... Figure 19. d(OFF)I d(ON)I is defined )/(E MAX2 D C OFF ) is defined 50% duty factor was used (Figure 13 are approximated )/ are defined in the switching waveforms OFF is the integral of the instantaneous during turn-on and 0 MAX1 ). d(ON d(OFF The )/ the OFF ; i.e. the OFF HGTG20N60B3D Rev. B ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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