FGA30N120FTDTU Fairchild Semiconductor, FGA30N120FTDTU Datasheet

IGBT 30A 1200V TRENCH TO-3P

FGA30N120FTDTU

Manufacturer Part Number
FGA30N120FTDTU
Description
IGBT 30A 1200V TRENCH TO-3P
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGA30N120FTDTU.pdf (9 pages)

Specifications of FGA30N120FTDTU

Igbt Type
Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2V @ 15V, 30A
Current - Collector (ic) (max)
60A
Power - Max
339W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-3P
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
60A
Gate To Emitter Voltage (max)
±25V
Package Type
TO-3PN
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
+/- 25 V
Continuous Collector Current At 25 C
30 A
Power Dissipation
339 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
60 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FGA30N120FTDTU
Manufacturer:
ALLEGRO
Quantity:
1 001
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
FGA30N120FTDTU
Manufacturer:
FAIRCHILD
Quantity:
2 869
©2009 Fairchild Semiconductor Corporation
FGH30N120FTD
Absolute Maximum Ratings
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
FGA30N120FTD
1200V, 30A Trench IGBT
Features
• Field stop trench technology
• High speed switching
• Low saturation voltage: V
• High input impedance
Applications
• Induction heating and Microwave oven
• Soft switching applications
V
V
I
I
I
P
T
T
T
R
R
R
C
CM (1)
F
stg
J
L
CES
GES
D
θJC
θJC
θJA
Symbol
Symbol
(IGBT)
(Diode)
Rev. A
Thermal Resistance, Junction to Case
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G C E
CE(sat)
= 1.6V @ I
Description
Parameter
TO-3P
C
= 30A
@ T
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
C
1
= 25
= 100
= 25
= 100
= 25
= 100
General Description
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching perfor-
mances, and easy parallel operation with exceptional avalanche
ruggedness. This device is designed for soft switching applica-
tions.
o
o
o
C
C
C
o
o
o
C
C
C
Typ.
-
-
-
G
-55 to +150
-55 to +150
Ratings
1200
± 25
339
132
300
60
30
90
30
Max.
0.38
1.2
C
E
40
May 2009
www.fairchildsemi.com
Units
Units
o
o
o
C/W
C/W
C/W
o
o
o
W
W
V
V
A
A
A
A
C
C
C
tm

Related parts for FGA30N120FTDTU

Image
Part Number
Description
Manufacturer
Datasheet
Request R
SM2G50US60
Part Number:
SM2G50US60
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
SM2G50US60.pdf (10 pages)
FTP5027RTU
Part Number:
FTP5027RTU
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
FTP5021OTU
Part Number:
FTP5021OTU
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
FDMS86300DC
Part Number:
FDMS86300DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86300DC.pdf (8 pages)
FDMS3006SDC
Part Number:
FDMS3006SDC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS3006SDC.pdf (9 pages)
FDMS3008SDC
Part Number:
FDMS3008SDC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS3008SDC.pdf (9 pages)
FDMS3016DC
Part Number:
FDMS3016DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS3016DC.pdf (8 pages)
FDMS86101DC
Part Number:
FDMS86101DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86101DC.pdf (8 pages)
FDD86113LZ
Part Number:
FDD86113LZ
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDD86113LZ.pdf (6 pages)
FDMS86500DC
Part Number:
FDMS86500DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86500DC.pdf (8 pages)
FDMS8558S
Part Number:
FDMS8558S
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS8558S.pdf (8 pages)
FDMS8560S
Part Number:
FDMS8560S
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS8560S.pdf (8 pages)
FDMS8570S
Part Number:
FDMS8570S
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS8570S.pdf (8 pages)
FDMC86116LZ
Part Number:
FDMC86116LZ
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMC86116LZ.pdf (7 pages)
FDMS86250
Part Number:
FDMS86250
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86250.pdf (7 pages)

FGA30N120FTDTU Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2009 Fairchild Semiconductor Corporation Rev. A FGH30N120FTD General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching perfor- mances, and easy parallel operation with exceptional avalanche ...

Page 2

... Package Marking and Ordering Information Device Marking Device FGA30N120FTD FGA30N120FTDTU For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. Electrical Characteristics of the IGBT Symbol Parameter Off Characteristics BV Collector to Emitter Breakdown Voltage V CES I Collector Cut-Off Current CES I G-E Leakage Current ...

Page 3

Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Peak Reverse Recovery Current rr Q Diode Reverse Recovery Charge rr FGA30N120FTD Rev 25°C unless otherwise noted ...

Page 4

Typical Performance Characteristics Figure 1. Typical Output Characteristics 180 20V 150 17V 15V 120 Collector-Emitter Voltage, V Figure 3. Typical Saturation Voltage Characteristics 120 Common Emitter V ...

Page 5

Typical Performance Characteristics Figure 7. Saturation Voltage vs 60A 4 30A I = 15A Gate-Emitter Voltage, V Figure 9. Gate charge Characteristics 15 Common Emitter ...

Page 6

Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current 1000 Common Emitter Ω 15V 125 C C 100 Collector ...

Page 7

Typical Performance Characteristics Figure 19. Reverse Current 50 200A di/dt = 100A Forward Current, I Figure 21. Reverse Recovery Time 1000 di/dt = 100A/ 800 200A/ 600 400 10 20 Forward Current, I Figure 22. ...

Page 8

Mechanical Dimensions Rev. A FGH30N120FTD TO-3PN 8 www.fairchildsemi.com ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

Related keywords