FGA30N120FTDTU Fairchild Semiconductor, FGA30N120FTDTU Datasheet - Page 2

• Manufacturer Part Number: FGA30N120FTDTU
• Description: IGBT 30A 1200V TRENCH TO-3P
• Manufacturer: Fairchild Semiconductor

Specifications of FGA30N120FTDTU

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 30A
• Current - Collector (ic) (max): 60A
• Power - Max: 339W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±25V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2 V
• Maximum Gate Emitter Voltage: +/- 25 V
• Continuous Collector Current At 25 C: 30 A
• Power Dissipation: 339 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH30N120FTD
Package Marking and Ordering Information
Electrical Characteristics of the IGBT
Off Characteristics
BV
I
I
On Characteristics
V
V
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
E
E
E
t
t
t
t
E
E
E
Q
Q
Q
Device Marking
Symbol
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
GE(th)
CE(sat)
on
off
ts
on
off
ts
ies
oes
res
g
ge
gc
FGA30N120FTD
CES
For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
Rev. A
Collector to Emitter Breakdown Voltage V
Collector Cut-Off Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
FGA30N120FTDTU
Parameter
Device
Package
TO-3PN
V
V
I
I
I
T
V
f = 1MHz
V
R
Resistive Load, T
V
R
Resistive Load, T
V
V
C
C
C
C
GE
CE
GE
CE
CC
CC
CE
GE
G
G
= 30A
= 30A
= 30mA, V
= 125
= 10Ω, V
= 10Ω, V
= 30V
= V
= 600V, I
= 0V, I
= V
= 600V, I
= 600V, I
= 15V
Test Conditions
T
C
CES
GES
,
,
o
= 25°C unless otherwise noted
V
V
C
,
GE
GE
2
C
V
, V
, V
GE
GE
GE
= 250µA
CE
C
C
C
= 15V
= 15V,
GE
CE
= 30A,
= 15V,
= 30A,
= 15V,
= 30A,
= 0V,
= V
C
C
= 0V
= 0V
Eco Status
= 25
= 125
GE
RoHS
o
C
o
C
Min.
1200
Packaging
3.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Type
Tube
Typ.
5140
0.54
1.16
1.70
0.74
1.63
2.37
150
101
198
259
127
364
208
211
1.6
2.0
95
31
40
41
97
6
-
-
-
Max.
Qty per Tube
±250
1.51
7.5
1
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
www.fairchildsemi.com
30ea
Units
mA
nA
mJ
mJ
mJ
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V