HGTG20N60A4D Fairchild Semiconductor, HGTG20N60A4D Datasheet
HGTG20N60A4D
Specifications of HGTG20N60A4D
HGTG20N60A4D_NL
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HGTG20N60A4D Summary of contents
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... SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor ...
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... GE = 600V - 8 15V - 142 20V - 182 105 - 280 - 150 o = 125 15V, - 105 - 55 - 115 - 510 - 330 UNITS MAX UNITS - - V μA - 250 - 3.0 mA 2.7 V 2.0 V 7.0 V ±250 - 162 nC 210 μJ - μJ 350 μJ 200 135 μJ - μJ 600 μJ 500 HGTG20N60A4D Rev. C1 ...
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... FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA 390V 3Ω GATE TO EMITTER VOLTAGE (V) GE FIGURE 4. SHORT CIRCUIT WITHSTAND TIME MAX UNITS - 0.43 C 1.9 C/W ON2 500 600 700 450 o = 125 C J 400 I SC 350 300 250 200 t SC 150 100 14 15 HGTG20N60A4D Rev. C1 ...
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... J GE 400 300 200 100 COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 3Ω 500μ 390V 125 COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 2.0 2.4 2 12V OR 15V 12V 125 15V HGTG20N60A4D Rev. C1 ...
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... G(REF) G(REF 600V 400V 200V GATE CHARGE (nC) G FIGURE 14. GATE CHARGE WAVEFORMS 125 500μ 390V TOTAL ON2 OFF 30A 20A 10A CE 0 GATE RESISTANCE (Ω) G FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE 100 120 140 160 = 15V GE 100 1000 HGTG20N60A4D Rev. C1 ...
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... FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT 800 V = 390V CE 600 400 200 0 200 300 400 500 600 di /dt, RATE OF CHANGE OF CURRENT (A/μs) EC FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF CURRENT 30A 20A 10A 125 125 125 20A EC o 125 10A 20A 10A EC 700 800 900 1000 HGTG20N60A4D Rev. C1 ...
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... FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT ©2009 Fairchild Semiconductor Corporation HGTG20N60A4D Unless Otherwise Specified (Continued RECTANGULAR PULSE DURATION (s) 1 HGTG20N60A4D DIODE TA49372 DUT + V = 390V DUTY FACTOR PEAK θ θ 90 OFF V CE 90% 10 d(OFF FIGURE 25. SWITCHING TEST WAVEFORMS 10% E ON2 d(ON)I HGTG20N60A4D Rev. C1 ...
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... A 50% duty factor was used (Figure 3) and the D ) are approximated )/ are defined in the switching waveforms OFF is the integral of the ON2 during turn-on and during turn-off. All tail losses are included in the CE ; i.e., the collector current equals zero OFF ). d(ON d(OFF The ON2 - T )/R . θ HGTG20N60A4D Rev. C1 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...