HGTG30N60A4D Fairchild Semiconductor, HGTG30N60A4D Datasheet - Page 2

• Manufacturer Part Number: HGTG30N60A4D
• Description: IGBT N-CH SMPS 600V 60A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG30N60A4D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 30A
• Current - Collector (ic) (max): 75A
• Power - Max: 463W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.6V
• Power Dissipation Pd: 463W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: HGTG30N60A4D_NL; HGTG30N60A4D_NL

Absolute Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
Collector Current Continuous
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
©2004 Fairchild Semiconductor Corporation
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
1. Pulse width limited by maximum junction temperature.
At T
At T
C
C
= 25
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
o
PARAMETER
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
C
= 25
> 25
o
J
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
o
T
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 150
J
T
= 25
C
= 25
o
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
C, Unless Otherwise Specified
o
C, Unless Otherwise Specified
SYMBOL
V
V
t
t
BV
Q
t
d(OFF)I
t
d(OFF)I
CE(SAT)
SSOA
GE(TH)
V
E
E
E
E
E
E
d(ON)I
d(ON)I
I
I
V
GES
g(ON)
CES
GEP
ON1
ON2
OFF
ON1
ON2
OFF
t
t
t
t
t
EC
CES
rI
rI
rr
fI
fI
I
V
I
V
I
V
T
L = 100 H, V
I
I
V
IGBT and Diode at T
I
V
V
R
L = 200 H,
Test Circuit (Figure 24)
IGBT and Diode at T
I
V
R
L = 200 H,
Test Circuit (Figure 24)
I
I
I
C
C
C
C
C
CE
CE
EC
EC
EC
GE
GE
J
GE
CE
CE
CE
CE
G
G
= 250 A, V
= 30A,
= 250 A, V
= 30A, V
= 30A,
= 150
= 3
= 3
= 30A,
= 30A,
= 30A
= 30A, dI
= 1A, dI
= 600V
= 15V
= 20V
= 300V
= 390V,
= 15V,
= 390V, V
o
TEST CONDITIONS
C, R
CE
EC
CE
EC
GE
CE
G
GE
/dt = 200A/ s
= 300V
/dt = 200A/ s
= 3 , V
= 600V
= V
= 0V
= 15V,
J
J
GE
T
T
T
T
V
V
J
= 25
= 125
, T
J
J
J
J
GE
GE
GE
= 25
= 125
= 25
= 125
C110
GEM
GES
CES
STG
C25
CM
= 15V
= 20V
o
= 15V,
C,
o
D
L
o
o
C,
C
C
o
o
C
C
HGTG30N60A4D,
150A at 600V
-55 to 150
MIN
600
150
4.5
600
240
463
260
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3.7
75
60
20
30
1000
TYP
225
300
150
280
600
240
180
280
450
1.8
1.6
5.2
8.5
2.2
25
12
38
24
11
58
40
30
-
-
-
-
-
MAX
1200
HGTG30N60A4D Rev. B1
250
270
360
350
200
750
2.8
2.6
2.0
7.0
250
2.5
70
55
42
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
W/
o
o
W
V
A
A
A
V
V
C
C
UNITS
o
C
mA
nC
nC
nA
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
A
V
V
A
J
J
J
J
J
J