HGTG30N60A4D Fairchild Semiconductor, HGTG30N60A4D Datasheet - Page 3

• Manufacturer Part Number: HGTG30N60A4D
• Description: IGBT N-CH SMPS 600V 60A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG30N60A4D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 30A
• Current - Collector (ic) (max): 75A
• Power - Max: 463W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.6V
• Power Dissipation Pd: 463W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: HGTG30N60A4D_NL; HGTG30N60A4D_NL

Electrical Specifications
NOTES:
Typical Performance Curves
©2004 Fairchild Semiconductor Corporation
Thermal Resistance Junction To Case
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
3. Turn-Off Energy Loss (E
FIGURE 1. DC COLLECTOR CURRENT vs CASE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
500
300
100
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
Figure 24.
at the point where the collector current equals zero (I
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
60
70
60
50
40
30
20
10
30
0
25
3
P
f
f
T
R
MAX1
MAX2
C
J
ØJC
= 125
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
= 0.27
PARAMETER
TEMPERATURE
= 0.05 / (t
= (P
EMITTER CURRENT
I
CE
o
C, R
50
, COLLECTOR TO EMITTER CURRENT (A)
D
o
- P
C/W, SEE NOTES
G
T
C
C
d(OFF)I
= 3 , L = 200 H, V
) / (E
, CASE TEMPERATURE (
OFF
ON2
75
10
+ t
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
d(ON)I
+ E
T
OFF
J
)
= 25
)
CE
100
o
= 390V
C, Unless Otherwise Specified (Continued)
Unless Otherwise Specified
o
SYMBOL
C)
R
30
125
JC
V
75
T
GE
C
CE
o
C
= 15V
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
V
15V
GE
IGBT
Diode
150
60
TEST CONDITIONS
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
200
150
100
18
16
14
12
10
50
8
6
4
0
10
0
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
T
J
= 150
100
V
V
CE
11
V
CE
o
GE
C, R
, COLLECTOR TO EMITTER VOLTAGE (V)
= 390V, R
, GATE TO EMITTER VOLTAGE (V)
ON1
G
J
200
= 3 , V
as the IGBT. The diode type is specified in
is the turn-on loss of the IGBT only. E
12
G
MIN
= 3 , T
-
-
GE
300
= 15V, L = 500 H
J
13
= 125
TYP
400
-
-
o
t
C
I
SC
SC
14
500
MAX
HGTG30N60A4D Rev. B1
0.27
0.65
600
15
UNITS
900
800
700
600
500
400
300
200
o
o
C/W
C/W
ON2
700