APT25GP120BDQ1G Microsemi Power Products Group, APT25GP120BDQ1G Datasheet

IGBT 1200V 69A 417W TO247

APT25GP120BDQ1G

Manufacturer Part Number
APT25GP120BDQ1G
Description
IGBT 1200V 69A 417W TO247
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT25GP120BDQ1G

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 25A
Current - Collector (ic) (max)
69A
Power - Max
417W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT25GP120BDQ1GMI
APT25GP120BDQ1GMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT25GP120BDQ1G
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Part Number:
APT25GP120BDQ1G
Manufacturer:
MICROSEMI/美高森美
Quantity:
20 000
Company:
Part Number:
APT25GP120BDQ1G
Quantity:
3 500
The POWER MOS 7
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
RBSOA
T
V
V
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
T
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Reverse Bias Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
®
IGBT is a new generation of high voltage power IGBTs. Using Punch
POWER MOS 7
1
(V
• 100 kHz operation @ 800V, 11A
• 50 kHz operation @ 800V, 19A
• RBSOA Rated
CE
CE
CE
@ T
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
®
GE
GE
C
C
C
GE
GE
= 150°C
= 25°C
= 110°C
= 15V, I
= 15V, I
= ±20V)
, I
J
C
= 150°C
GE
= 1mA, T
GE
GE
®
C
C
= 0V, I
IGBT
= 25A, T
= 25A, T
= 0V, T
= 0V, T
j
C
= 25°C)
= 350µA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
= 25°C unless otherwise specified.
1200
APT25GP120BDQ1(G)
MIN
3
APT25GP120BDQ1
APT25GP120BDQ1G*
90A @ 960V
-55 to 150
1200
APT25GP120BDQ1(G)
±30
417
300
TYP
69
33
90
4.5
3.3
3.0
G
G
1200V
C
E
3000
MAX
±100
350
3.9
6
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA

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APT25GP120BDQ1G Summary of contents

Page 1

... 1200V 0V 25° 1200V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 1200V APT25GP120BDQ1(G) APT25GP120BDQ1 APT25GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish 25°C unless otherwise specified. C APT25GP120BDQ1(G) 1200 ± 90A @ 960V 417 -55 to 150 300 MIN TYP MAX 1200 3 4 ...

Page 2

Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc Reverse Bias Safe Operating ...

Page 3

T = 25° 125° COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output Characteristics(T J 100 250µs PULSE TEST<0.5 % DUTY CYCLE 80 60 ...

Page 4

V = 15V 600V 25°C T =125° 5Ω 100µ ...

Page 5

TYPICAL PERFORMANCE CURVES 10,000 5,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.35 0. 0.9 0.25 0.7 0.20 0.5 0.15 0.3 0.10 0.05 0.1 ...

Page 6

APT15DQ120 D.U.T. Figure 21, Inductive Switching Test Circuit 90 d(off) f 90% 10% Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions 10% 5% Figure 22, Turn-on Switching Waveforms and Definitions ...

Page 7

TYPICAL PERFORMANCE CURVES ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol Characteristic / Test Conditions I (AV) Maximum Average Forward Current ( (RMS) RMS Forward Current (Square wave, 50% duty) F Non-Repetitive Forward Surge Current (T I FSM ...

Page 8

T = 175° 125° 25° -55° ANODE-TO-CATHODE VOLTAGE (V) F Figure 26. Forward Current vs. Forward Voltage ...

Page 9

TYPICAL PERFORMANCE CURVES +18V Forward Conduction Current /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current. RRM Reverse R ecovery ...

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