APT25GP120BDQ1G Microsemi Power Products Group, APT25GP120BDQ1G Datasheet - Page 5

• Manufacturer Part Number: APT25GP120BDQ1G
• Description: IGBT 1200V 69A 417W TO247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT25GP120BDQ1G

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 25A
• Current - Collector (ic) (max): 69A
• Power - Max: 417W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT25GP120BDQ1GMI; APT25GP120BDQ1GMI

TYPICAL PERFORMANCE CURVES
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Case temperature(°C)
10,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
5,000
1,000
0.35
0.30
0.25
0.20
0.15
0.10
0.05
500
100
V
50
10
Junction
temp (°C)
CE
0
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
(watts)
Power
-5
D = 0.9
10
0.05
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
20
RC MODEL
0.128
0.173
10
30
-4
40
RECTANGULAR PULSE DURATION (SECONDS)
C
C
C
oes
res
ies
0.00833
0.171
50
SINGLE PULSE
10
-3
182
100
Figure 20, Operating Frequency vs Collector Current
50
10
5
T
T
D = 50 %
V
R
J
C
CE
G
10
= 125
= 75
= 5Ω
10
= 800V
100
Figure 18,Minimim Switching Safe Operating Area
-2
90
80
70
60
50
40
30
20
10
°
0
°
C
I
C
C
0 100 200 300 400 500 600 700 800 900 1000
15
V
, COLLECTOR CURRENT (A)
CE
, COLLECTOR TO EMITTER VOLTAGE
20
25 30
Note:
Peak T J = P DM x Z θJC + T C
10
35
Duty Factor D =
-1
t 1
40
APT25GP120BDQ1(G)
t 2
45
t 1
50
/
t 2
F
f
f
P
max1
max2
max
diss
1.0
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f