APT25GP120BDQ1G Microsemi Power Products Group, APT25GP120BDQ1G Datasheet - Page 6

• Manufacturer Part Number: APT25GP120BDQ1G
• Description: IGBT 1200V 69A 417W TO247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT25GP120BDQ1G

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 25A
• Current - Collector (ic) (max): 69A
• Power - Max: 417W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT25GP120BDQ1GMI; APT25GP120BDQ1GMI

APT25GP120BDQ1(G)
Gate Voltage
10%
APT15DQ120
T
= 125 °C
t
J
d(on)
V
V
I
C
CE
CC
t
Collector Current
r
90%
10%
5 %
5%
A
Collector Voltage
D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
V
TEST
*DRIVER SAME TYPE AS D.U.T.
90%
Gate Voltage
T
= 125 °C
J
A
V
CE
t
t
d(off)
f
Collector Voltage
I
C
100uH
V
B
CLAMP
90%
0
10%
Collector Current
A
Switching Energy
DRIVER*
D.U.T.
Figure 24, E ON1 Test Circuit
Figure 23, Turn-off Switching Waveforms and Definitions