APT25GP120BDQ1G Microsemi Power Products Group, APT25GP120BDQ1G Datasheet - Page 3

• Manufacturer Part Number: APT25GP120BDQ1G
• Description: IGBT 1200V 69A 417W TO247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT25GP120BDQ1G

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 25A
• Current - Collector (ic) (max): 69A
• Power - Max: 417W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT25GP120BDQ1GMI; APT25GP120BDQ1GMI

FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
1.06
1.02
0.98
0.94
0.90
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
60
50
40
30
20
10
80
60
40
20
0
0
0
-50
FIGURE 1, Output Characteristics(T
V
0
0
6
CE
V
T
TEST<0.5 % DUTY
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
J
1
GE
250µs PULSE
T
-25
= 125°C
J
, GATE-TO-EMITTER VOLTAGE (V)
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
1
2
8
T
T
J
0
J
= 125°C
3
= 25°C
10
4
2
25
T
J
= 25°C
T
5
J
= -55°C
50
12
3
6
<0.5 % DUTY CYCLE
250µs PULSE TEST
7
75
T
J
= 25°C.
14
4
8
J
100 125
= 25°C)
9
16
10
5
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
60
50
40
30
20
10
16
14
12
10
90
80
70
60
50
40
30
20
10
FIGURE 2, Output Characteristics (T
0
8
6
4
2
0
0
0
-25
-50
V
0
0
CE
T
<0.5 % DUTY CYCLE
I
250µs PULSE TEST
C
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
T
= 25°C
= 25A
-25
J
V
= 125°C
20
T
0
GE
T
C
J
1
= 15V.
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
0
T
GATE CHARGE (nC)
V
J
40
25
CE
= 25°C
V
25
CE
=600V
2
=240V
60
50
50
3
75 100 125 150
75
80
V
CE
4
100
100
= 480V
J
= 125°C)
120
125
5