IGD01N120H2 Infineon Technologies, IGD01N120H2 Datasheet - Page 5

• Manufacturer Part Number: IGD01N120H2
• Description: IGBT 1200V 3.2A 28W TO252-3
• Manufacturer: Infineon Technologies

Specifications of IGD01N120H2

• Package / Case: DPak, TO-252 (5 leads + tab)
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 1A
• Current - Collector (ic) (max): 3.2A
• Power - Max: 28W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 3.2 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: DPAK (TO-252)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 3.2 A
• Ic(max) @ 100°: 1.3 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IGD01N120H2XT

Power Semiconductors
Figure 7. Typical transfer characteristics
(V
Figure 5. Typical output characteristics
(T
5A
4A
3A
2A
1A
0A
5A
4A
3A
2A
1A
0A
CE
3V
0V
j
= 25 C)
= 20V)
V
CE
V
V
,
GE
GE
COLLECTOR
1V
=15V
T
,
12V
10V
j
=+25°C
8V
6V
GATE
5V
T
j
=+150°C
2V
-
EMITTER VOLTAGE
-
EMITTER VOLTAGE
7V
3V
4V
9V
5V
5
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
Figure 6. Typical output characteristics
(T
5A
4A
3A
2A
1A
0A
GE
4V
3V
2V
1V
0V
0V
-50°C
j
= 150 C)
= 15V)
V
CE
V
GE
,
T
1V
COLLECTOR
=15V
j
,
12V
10V
JUNCTION TEMPERATURE
8V
6V
0°C
2V
50°C
-
IGD01N120H2
3V
EMITTER VOLTAGE
IGP01N120H2
4V
100°C
Rev. 2.4 Sept. 07
5V
I
I
C
C
I
C
150°C
=0.5A
=2A
=1A
6V