IGD01N120H2 Infineon Technologies, IGD01N120H2 Datasheet - Page 9

• Manufacturer Part Number: IGD01N120H2
• Description: IGBT 1200V 3.2A 28W TO252-3
• Manufacturer: Infineon Technologies

Specifications of IGD01N120H2

• Package / Case: DPak, TO-252 (5 leads + tab)
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 1A
• Current - Collector (ic) (max): 3.2A
• Power - Max: 28W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 3.2 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: DPAK (TO-252)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 3.2 A
• Ic(max) @ 100°: 1.3 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IGD01N120H2XT

Power Semiconductors
Figure 21. Typical turn off behavior, soft
switching
(V
Dynamic test circuit in Figure E)
1000V
800V
600V
400V
200V
GE
0V
=15/0V, R
0.0
0.4
G
t
=220Ω, T
p
,
PULSE WIDTH
0.8
1.2
j
= 150 C,
1.6
2.0
1.0A
0.8A
0.6A
0.4A
0.2A
0.0A
9
IGD01N120H2
IGP01N120H2
Rev. 2.4 Sept. 07