IKB10N60T Infineon Technologies, IKB10N60T Datasheet - Page 3

• Manufacturer Part Number: IKB10N60T
• Description: IGBT 600V 20A 110W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKB10N60T

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 110W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 10A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 110W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 20.0 A
• Ic(max) @ 100°: 10.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
2)
1)
Power Semiconductors
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
b
b
t
t
t
t
E
E
E
t
Q
I
d i
t
t
t
t
E
E
E
t
Q
I
d i
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
r r
r r m
d ( o n )
r
d ( o f f )
f
r r
r r m
o n
o f f
t s
o n
o f f
t s
r r
r r
r r
r r
/d t
/d t
j
j
=25 C
=175 C
3
TrenchStop
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
j
j
j
j
C C
G E
R
C C
G E
R
G
G
=2 5 C ,
=2 5 C ,
F
=1 7 5 C,
=1 7 5 C
F
2 )
1 )
2 )
= 4 00 V , I
1 )
= 4 00 V , I
= 23 ,
= 2 3
/ d t =8 8 0 A/ s
/ d t =8 8 0 A/ s
= 40 0 V, I
= 0/ 15 V ,
= 40 0 V, I
= 0/ 15 V ,
=6 0 nH ,
=6 0 nH ,
= 4 0p F
= 4 0p F
Conditions
Conditions
F
F
C
C
®
= 1 0 A,
= 1 0 A,
= 1 0 A,
= 1 0 A,
Series
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKB10N60T
Value
Value
0.16
0.27
0.43
0.38
0.26
0.35
0.61
0.92
typ.
typ.
215
115
680
233
200
390
12
38
10
10
11
63
13
8
Rev. 2.3 Oct. 07
max.
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
mJ
ns
µC
A
A/ s
Unit
ns
mJ
ns
µC
A
A/ s
p