IKB10N60T Infineon Technologies, IKB10N60T Datasheet - Page 6

• Manufacturer Part Number: IKB10N60T
• Description: IGBT 600V 20A 110W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKB10N60T

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 110W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 10A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 110W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 20.0 A
• Ic(max) @ 100°: 10.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
100ns
Figure 9. Typical switching times as a
100ns
Figure 11. Typical switching times as a
10ns
10ns
1ns
1ns
25°C
0A
t
t
d(on)
r
t
d(on)
T
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
50°C
J
I
CE
GE
,
C
t
,
JUNCTION TEMPERATURE
r
5A
= 400V, V
= 0/15V, I
COLLECTOR CURRENT
75°C
1 0A
C
GE
100°C 125°C 15 0°C
= 10A, R
= 0/15V, R
J
CE
=175°C,
= 400V,
15A
G
=23Ω,
G
= 23Ω,
t
d(off)
t
f
20A
t
d(off)
t
f
6
TrenchStop
Figure 10. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as
100ns
7V
6V
5V
4V
3V
2V
1V
0V
10ns
-50°C
1ns
®
m in.
Series
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
a function of junction temperature
( I
T
C
CE
t
J
d(on)
t
,
r
0°C
= 0.3mA)
= 400V, V
JUNCTION TEMPERATURE
R
typ.
G
,
GATE RESISTOR
50°C
GE
IKB10N60T
= 0/15V, I
J
= 175°C,
100°C
Rev. 2.3 Oct. 07
m ax.
C
= 10A,
t
150°C
d(off)
t
f
p