SKB10N60A Infineon Technologies, SKB10N60A Datasheet - Page 3

• Manufacturer Part Number: SKB10N60A
• Description: IGBT NPT 600V 20A 92W TO263-3
• Manufacturer: Infineon Technologies

Specifications of SKB10N60A

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 92W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 21 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 21.0 A
• Ic(max) @ 100°: 10.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SKB10N60AXT

Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
1)
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
b
b
t
t
t
t
E
E
E
t
t
t
Q
I
d i
t
t
t
t
E
E
E
t
t
t
Q
I
d i
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
r r
S
F
r r m
d ( o n )
r
d ( o f f )
f
r r
S
F
r r m
o n
o f f
t s
o n
o f f
t s
r r
r r
r r
r r
/d t
/d t
j
j
=25 C
=150 C
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
j
C C
G E
j
R
j
C C
G E
j
R
G
G
=2 5 C ,
=2 5 C ,
F
=1 5 0 C
=1 5 0 C
F
1 )
1 )
1 )
1 )
= 2 00 V , I
= 2 00 V , I
= 25 ,
= 25
/ d t =2 0 0 A/ s
/ d t =2 0 0 A/ s
3
= 40 0 V, I
= 0/ 15 V ,
=1 8 0n H,
= 40 0 V, I
= 0/ 15 V ,
=1 8 0n H,
= 5 5p F
= 5 5p F
Conditions
Conditions
F
F
C
C
= 1 0 A,
= 1 0 A,
= 1 0 A,
= 1 0 A,
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SKB10N60A
Value
Value
0.320
0.260
0.280
0.540
0.15
0.17
typ.
typ.
178
220
200
310
180
198
350
314
690
200
4.5
6.3
28
12
24
20
28
12
26
36
Rev. 2.2
0.173
0.221
0.394
0.299
0.364
0.663
max.
max.
214
238
34
15
29
34
15
32
-
-
-
-
-
-
-
-
-
-
-
-
Oct. 07
Unit
ns
mJ
ns
nC
A
A/ s
Unit
ns
mJ
ns
nC
A
A/ s