SKB10N60A Infineon Technologies, SKB10N60A Datasheet - Page 7

• Manufacturer Part Number: SKB10N60A
• Description: IGBT NPT 600V 20A 92W TO263-3
• Manufacturer: Infineon Technologies

Specifications of SKB10N60A

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 92W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 21 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 21.0 A
• Ic(max) @ 100°: 10.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SKB10N60AXT

Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
I
Dynamic test circuit in Figure E)
C
1,6m J
1,4m J
1,2m J
1,0m J
0,8m J
0,6m J
0,4m J
0,2m J
0,0m J
0,8mJ
0,6mJ
0,4mJ
0,2mJ
0,0mJ
GE
= 10A, R
= 0/+15V, R
0A
0°C
E
*) E
due to diode recovery.
E
E
*) E
due to diode recovery.
T
ts
off
on
j
I
G
,
*
C
on
on
*
JUNCTION TEMPERATURE
,
= 2 5 ,
5A
and E
and E
COLLECTOR CURRENT
G
50°C
j
CE
= 25 ,
= 150 C, V
ts
ts
include losses
include losses
= 400V, V
10A
100°C
1 5A
CE
GE
= 400V,
= 0/+15V,
20A
150°C
E
E
E
on
ts
off
*
*
2 5A
7
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t
10
10
10
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
10
1 ,0m J
0 ,8m J
0 ,6m J
0 ,4m J
0 ,2m J
GE
-1
-2
-3
0
K/W
K/W
K/W
K/W
= 0/+15V, I
p
1µs
/ T)
0
D=0.5
0.02
0.01
single pulse
*) E
due to diode recovery.
0.2
0.1
0.05
10µs
on
R
and E
2 0
C
G
t
p
,
= 10A,
,
j
GATE RESISTOR
100µs
= 150 C, V
PULSE WIDTH
ts
include losses
SKB10N60A
40
R
0.4287
0.4830
0.4383
R , ( K / W )
1m s
1
C
1
=
CE
1
Rev. 2.2
/ R
10m s 100m s
= 400V,
6 0
1
C
0.0358
4.3*10
3.46*10
2
=
, ( s )
2
/R
-3
80
R
2
-4
Oct. 07
E
E
2
E
on
off
ts
*
*
1s