IGW03N120H2 Infineon Technologies, IGW03N120H2 Datasheet - Page 6

IGBT 1200V 9.6A 62.5W TO247-3

IGW03N120H2

Manufacturer Part Number
IGW03N120H2
Description
IGBT 1200V 9.6A 62.5W TO247-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of IGW03N120H2

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 3A
Current - Collector (ic) (max)
9.6A
Power - Max
62.5W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
9.6A
Collector Emitter Voltage Vces
2.8V
Power Dissipation Max
62.5W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
Power Dissipation Pd
62.5W
Rohs Compliant
Yes
Switching Frequency
HighSpeed2 30-100 kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
9.6 A
Ic(max) @ 100°
3.9 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Power Semiconductors
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
V
dynamic test circuit in Fig.E)
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
V
dynamic test circuit in Fig.E)
CE
GE
1000ns
1000ns
100ns
100ns
10ns
10ns
= 800V, V
= +15V/0V, I
1ns
1ns
25°C
0A
T
I
j
,
C
JUNCTION TEMPERATURE
,
50°C
t
t
COLLECTOR CURRENT
GE
t
d(on)
f
t
d(off)
r
t
t
d(off)
d(on)
t
t
f
r
C
= +15V/0V, R
j
CE
= 150 C,
= 3A, R
2A
75°C
= 800V,
100°C 125°C 150°C
G
= 82 ,
G
4A
= 82 ,
6
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
V
dynamic test circuit in Fig.E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I
C
CE
1000ns
5V
4V
3V
2V
1V
0V
100ns
= 0.09mA)
-50°C
10ns
= 800V, V
1ns
0
T
j
,
JUNCTION TEMPERATURE
0°C
R
t
t
GE
d(off)
d(on)
t
t
r
G
f
50
,
= +15V/0V, I
j
GATE RESISTOR
= 150 C,
50°C
IGW03N120H2
IGP03N120H2
100
C
100°C
= 3A,
Rev. 2.5 Sept. 07
150
150°C
max.
min.
typ.

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