IGW03N120H2 Infineon Technologies, IGW03N120H2 Datasheet - Page 8

• Manufacturer Part Number: IGW03N120H2
• Description: IGBT 1200V 9.6A 62.5W TO247-3
• Manufacturer: Infineon Technologies

Specifications of IGW03N120H2

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 3A
• Current - Collector (ic) (max): 9.6A
• Power - Max: 62.5W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 9.6A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 62.5W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Power Dissipation Pd: 62.5W
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 9.6 A
• Ic(max) @ 100°: 3.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Power Semiconductors
10
10
100pF
10
10pF
Figure 17. Typical gate charge
(I
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(V
-1
-2
0
1nF
K/W
K/W
K/W
C
GE
V
= 3A)
1µs
0V
CE
0.02
0.05
0.01
= 0V, f = 1MHz)
0.1
D=0.5
0.2
,
single pulse
COLLECTOR
10µs
Q
GE
10V
,
1.082517
0.328671
0.588811
GATE CHARGE
R , ( K / W )
100µs
R
1
C
-
EMITTER VOLTAGE
1
=
1
/R
1ms
20V
1
0.000795
0.000179
0.004631
C
2
, ( s )
=
10ms
2
/R
R
2
30V
2
100ms
C
C
C
oss
rss
iss
8
1000V
20V
15V
10V
800V
600V
400V
200V
Figure 17. Typical gate charge
(I
Figure 20. Typical turn off behavior, hard
switching
(V
Dynamic test circuit in Figure E)
5V
0V
0V
C
0nC
GE
= 3A)
=15/0V, R
0.0
0.2
Q
U
t
GE
CE
10nC
p
0.4
,
G
=240V
,
PULSE WIDTH
=82Ω, T
GATE CHARGE
0.6
IGW03N120H2
IGP03N120H2
0.8
j
= 150 C,
20nC
U
1.0
CE
Rev. 2.5 Sept. 07
=960V
1.2
3A
2A
1A
0A
30nC