SGB15N120 Infineon Technologies, SGB15N120 Datasheet - Page 6

• Manufacturer Part Number: SGB15N120
• Description: IGBT NPT 1200V 30A 198W TO263-3
• Manufacturer: Infineon Technologies

Specifications of SGB15N120

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 15A
• Current - Collector (ic) (max): 30A
• Power - Max: 198W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 30 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGB15N120XT

Power Semiconductors
1000ns
100ns
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
V
dynamic test circuit in Fig.E )
1000ns
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
V
dynamic test circuit in Fig.E )
10ns
100ns
CE
GE
10ns
= 800V, V
= +15V/0V, I
-50°C
0A
t
t
f
r
T
j
I
,
C
JUNCTION TEMPERATURE
,
t
10A
d(off)
COLLECTOR CURRENT
GE
0°C
t
r
C
= +15V/0V, R
j
CE
= 150 C,
t
t
= 15A, R
f
t
d(off)
d(on)
= 800V,
20A
50°C
t
d(on)
G
30A
= 33 ,
G
100°C
= 3 3 ,
40A
150°C
6
1000ns
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
V
dynamic test circuit in Fig.E )
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I
100ns
C
CE
10ns
6V
5V
4V
3V
2V
1V
0V
= 0.3mA)
-50°C
= 800V, V
0
T
t
j
f
,
JUNCTION TEMPERATURE
0°C
R
t
GE
r
G
,
= +15V/0V, I
j
GATE RESISTOR
= 150 C,
25
SGB15N120
50°C
t
d(off)
t
d(on)
C
100°C
Rev. 2_2
= 15A,
50
150°C
max.
min.
typ.
Apr 07