SGB15N120 Infineon Technologies, SGB15N120 Datasheet - Page 8

• Manufacturer Part Number: SGB15N120
• Description: IGBT NPT 1200V 30A 198W TO263-3
• Manufacturer: Infineon Technologies

Specifications of SGB15N120

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 15A
• Current - Collector (ic) (max): 30A
• Power - Max: 198W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 30 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGB15N120XT

Power Semiconductors
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(V
30 s
20 s
10 s
20V
15V
10V
0 s
CE
5V
0V
Figure 17. Typical gate charge
(I
10V
0nC
C
= 1200V, start at T
= 15A)
V
GE
11V
,
Q
50nC
GATE
GE
,
GATE CHARGE
-
12V
EMITTER VOLTAGE
100nC
j
= 25 C)
13V
U
150nC
CE
14V
=960V
15V
8
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(100V V
100pF
300A
250A
200A
150A
100A
50A
1nF
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(V
0A
10V
GE
0V
V
CE
= 0V, f = 1MHz)
CE
V
,
GE
COLLECTOR
1200V, T
12V
,
GATE
10V
-
14V
EMITTER VOLTAGE
C
SGB15N120
= 25 C, T
-
EMITTER VOLTAGE
20V
16V
Rev. 2_2
j
150 C)
18V
30V
C
C
C
oss
rss
Apr 07
iss
20V