IGW08T120 Infineon Technologies, IGW08T120 Datasheet - Page 5

• Manufacturer Part Number: IGW08T120
• Description: IGBT 1200V 16A 70W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGW08T120

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 8A
• Current - Collector (ic) (max): 16A
• Power - Max: 70W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 8A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 70W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 16.0 A
• Ic(max) @ 100°: 8.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
20A
15A
10A
20A
15A
10A
Figure 5. Typical output characteristic
Figure 7. Typical transfer characteristic
5A
0A
5A
0A
0V
0V
V
GE
V
=17V
CE
11V
13V
15V
1V
2V
9V
7V
V
,
(T
(V
GE
COLLECTOR
j
CE
= 25°C)
,
T
GATE-EMITTER VOLTAGE
=20V)
2V
J
4V
=150°C
25°C
3V
6V
-
EMITTER VOLTAGE
4V
8V
5V
10V
6V
12V
5
TrenchStop
Figure 6. Typical output characteristic
Figure 8. Typical collector-emitter
20A
15A
10A
3,0V
2,5V
2,0V
1,5V
1,0V
0,5V
0,0V
5A
0A
-50°C
0V
®
V
V
Series
GE
CE
=17V
(T
saturation voltage as a function of
junction temperature
(V
,
T
11V
15V
13V
1V
COLLECTOR
J
9V
7V
j
GE
,
= 150°C)
JUNCTION TEMPERATURE
= 15V)
0°C
2V
-
3V
EMITTER VOLTAGE
IGW08T120
50°C
4V
Rev. 2.6
5V
100°C
I
I
I
I
C
C
C
C
Nov. 09
6V
=2.5A
=5A
=15A
=8A
q