IGW08T120 Infineon Technologies, IGW08T120 Datasheet - Page 9

• Manufacturer Part Number: IGW08T120
• Description: IGBT 1200V 16A 70W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGW08T120

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 8A
• Current - Collector (ic) (max): 16A
• Power - Max: 70W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 8A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 70W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 16.0 A
• Ic(max) @ 100°: 8.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
10
10
600V
400V
200V
Figure 21. Typical turn on behavior
10
Figure 23. IGBT transient thermal resistance
0V
-1
-2
0
K/W
K/W
K/W
0us
V
I
10µs
C
CE
D=0.5
0.05
0.2
0.1
(V
Dynamic test circuit in Figure E)
(D = t
0.5us
GE
100µs
0.02
0.01
single pulse
=0/15V, R
t
p
P
/ T)
,
PULSE WIDTH
t,
1ms
TIME
1us
R
G
0.187
0.575
0.589
0.350
R , ( K / W )
1
=81Ω, T
C
1
=
10ms
τ
1
/ R
1
1.5us
j
C
= 150°C,
1.73*10
2.75*10
2.57*10
2.71*10
2
100ms
=
τ
τ
, ( s )
2
/ R
R
2
-1
-2
-3
-4
2
30A
20A
10A
0A
9
TrenchStop
Figure 22. Typical turn off behavior
30A
20A
10A
0A
0us
V
I
C
CE
®
Series
(V
Dynamic test circuit in Figure E)
0.5us
GE
=15/0V, R
t,
1us
TIME
IGW08T120
G
=81Ω, T
Rev. 2.6
1.5us
j
= 150°C,
Nov. 09
600V
400V
200V
0V
q