SGW20N60HS Infineon Technologies, SGW20N60HS Datasheet
SGW20N60HS
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SGW20N60HS Summary of contents
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... Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors http://www.infineon.com/igbt Package C j off 240µJ TO220AB 150 C 240µJ TO-247AC 150 C Symbol jmax <1µs, D<0.05 SGP20N60HS SGW20N60HS P-TO-220-3-1 P-TO-247-3-1 (TO-220AB) (TO-247AC) Ordering Code Q67040-S4498 Q67040-S4499 Value 600 115 178 -55...+150 175 260 Rev.2 Aug-02 Unit V ...
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... Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors Symbol Conditions TO-220AB TO-247AC Symbol Conditions = SGP20N60HS SGW20N60HS Max. Value Unit 0.7 K Value Unit min. Typ. max. 600 - - V 2.8 3.15 3.5 4. 2500 - - 100 1100 pF - 105 - 64 - 100 170 A Rev.2 Aug-02 ...
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... Energy losses include E “tail” and diode reverse recovery 6Ω Energy losses include E “tail” and diode reverse recovery SGP20N60HS SGW20N60HS Value Unit min. typ. max 207 - 0.30 - 0.69 Value Unit min. typ. max 8 0. 0. 222 - 0.36 - 0.96 ...
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... Power Semiconductors 100A 10A 1A 0,1A 10kHz 100kHz 1V Figure 2. Safe operating area = 400V 30A 20A 10A 0A 25°C 100 °C 1 25°C Figure 4. Collector current as a function of 4 SGP20N60HS SGW20N60HS 10V 100V , - V COLLECTOR EMITTER VOLTAGE 150 C;V =15V 75°C 125°C , CASE TEMPERATURE T ...
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... CE Power Semiconductors 50A 40A 30A 20A 10A Figure 6. Typical output characteristic 5, °C 5, °C 4,5V 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V -50° Figure 8. Typical collector-emitter 5 SGP20N60HS SGW20N60HS =20V 15V 13V 11V COLLECTOR EMITTER VOLTAGE 150° 0°C 50°C 100°C , ...
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... Figure 10. Typical switching times as a =16Ω, G 5,0V 4,5V 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V -50°C 100°C 150°C Figure 12. Gate-emitter threshold voltage as =400V, =16Ω SGP20N60HS SGW20N60HS t d(o ff d(on GATE RESISTOR G function of gate resistor (inductive load, T =150°C, J =400V, V =0/15V, I =20A, ...
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... K/W 100°C 150°C Figure 16. IGBT transient thermal resistance =400V, =16Ω SGP20N60HS SGW20N60HS *) Eon include losses due to diode recovery , R GATE RESISTOR function of gate resistor (inductive load, T =150°C, J =400V, V =0/15V, I =20A Dynamic test circuit in Figure E) D=0.5 0.2 0.1 ...
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... V Figure 18. Typical capacitance as a function 250A 200A 150A 100A 50A 0A 13V 14V 10V Figure 20. Typical short circuit collector = 25° SGP20N60HS SGW20N60HS 10V 20V , - COLLECTOR EMITTER VOLTAGE CE of collector-emitter voltage ( V =0V MHz) GE 12V 14V 16V 18V , - V GATE EMITETR VOLTAGE ...
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... TO-220AB TO-247AC Power Semiconductors SGP20N60HS SGW20N60HS dimensions [mm] symbol min max A 9.70 10.30 B 14.88 15.95 C 0.65 0.86 D 3.55 3.89 E 2.60 3.00 F 6.00 6.80 G 13.00 14.00 H 4.35 4.75 K 0.38 0.65 L 0.95 1.32 M 2.54 typ. N 4.30 4.50 P 1.17 1.40 T 2.30 2.72 [mm] symbol min max A 4 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Published by Infineon Technologies AG, Power Semiconductors SGP20N60HS SGW20N60HS ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity =60nH =40pF. Rev.2 Aug-02 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors SGP20N60HS SGW20N60HS 11 Rev.2 Aug-02 ...
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