SGW20N60HS Infineon Technologies, SGW20N60HS Datasheet - Page 4

• Manufacturer Part Number: SGW20N60HS
• Description: IGBT NPT 600V 36A 178W TO247-3
• Manufacturer: Infineon Technologies

Specifications of SGW20N60HS

• Package / Case: TO-247-3 (Straight Leads)
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 3.15V @ 15V, 20A
• Current - Collector (ic) (max): 36A
• Power - Max: 178W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 36 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: HighSpeed 30-100 kHz
• Package: TO-247
• Vce (max): 600.0 V
• Ic(max) @ 25°: 36.0 A
• Ic(max) @ 100°: 20.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGW20N60HSXK

Power Semiconductors
80A
70A
60A
50A
40A
30A
20A
10A
Figure 1. Collector current as a function of
1 80W
1 60W
1 40W
1 20W
1 00W
Figure 3. Power dissipation as a function of
0A
80W
60W
40W
20W
0W
10Hz
25 °C
100Hz
switching frequency
(T
V
case temperature
(T
f,
GE
T
50°C
j
j
SWITCHING FREQUENCY
C
= 0/+15V, R
,
150 C, D = 0.5, V
150 C)
CASE TEMPERATURE
I
I
1kHz
c
c
75 °C
T
T
C
C
=80°C
=110°C
G
= 16 )
100 °C
10kHz
CE
= 400V,
1 25°C
100kHz
4
Figure 2. Safe operating area
Figure 4. Collector current as a function of
100A
30A
20A
10A
0,1A
10A
0A
1A
25°C
1V
V
CE
(D = 0, T
T
case temperature
(V
,
j
COLLECTOR
T
GE
150 C;V
C
,
CASE TEMPERATURE
10V
15V, T
SGW20N60HS
SGP20N60HS
C
= 25 C,
75°C
GE
-
EMITTER VOLTAGE
j
=15V)
150 C)
100V
Rev.2 Aug-02
125°C
1000V
DC
15µs
50µs
1ms
t
200µs
P
=4µs