IGW15T120 Infineon Technologies, IGW15T120 Datasheet - Page 6

• Manufacturer Part Number: IGW15T120
• Description: IGBT 1200V 30A 110W YO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGW15T120

• Package / Case: TO-247-3 (Straight Leads)
• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 15A
• Current - Collector (ic) (max): 30A
• Power - Max: 110W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.2 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 30 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 30 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2.2V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IGW15T120XK

Power Semiconductors
100ns
100ns
Figure 9. Typical switching times as a
Figure 11. Typical switching times as a
10ns
10ns
1ns
0A
0°C
t
t
t
t
t
t
f
t
d(on)
r
f
d(off)
d(off)
t
d(on)
r
T
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
J
I
CE
GE
,
C
,
JUNCTION TEMPERATURE
=600V, V
=0/15V, I
COLLECTOR CURRENT
50°C
10A
C
GE
=15A, R
=0/15V, R
J
CE
=150°C,
100°C
=600V,
G
20A
=56Ω,
G
=56Ω,
TrenchStop
150°C
6
Figure 10. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as
®
100ns
7V
6V
5V
4V
3V
2V
1V
0V
10ns
-50°C
Series
1µs
1ns
10Ω
t
t
f
d(off)
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
a function of junction temperature
(I
T
CE
C
J
,
0°C
= 0.6mA)
=600V, V
JUNCTION TEMPERATURE
R
35Ω
G
,
GATE RESISTOR
50°C
GE
IGW15T120
60Ω
=0/15V, I
J
=150°C,
Rev. 2.5
100°C
85Ω
C
=15A,
150°C
Nov. 09
110Ω
max.
typ.
min.
t
d(on)
t
r