IGW15T120 Infineon Technologies, IGW15T120 Datasheet - Page 7

• Manufacturer Part Number: IGW15T120
• Description: IGBT 1200V 30A 110W YO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGW15T120

• Package / Case: TO-247-3 (Straight Leads)
• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 15A
• Current - Collector (ic) (max): 30A
• Power - Max: 110W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.2 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 30 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 30 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2.2V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IGW15T120XK

Power Semiconductors
8,0mJ
6,0mJ
4,0mJ
2,0mJ
0,0mJ
Figure 13. Typical switching energy losses
4mJ
3mJ
2mJ
1mJ
0mJ
Figure 15. Typical switching energy losses
5A
E
E
E
ts
off
on
*) E
*
*
*) E
due to diode recovery
50°C
due to diode recovery
on
T
E
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of junction
temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
E
E
J
on
ts
I
CE
GE
and E
off
on
,
C
*
10A
and E
*
,
JUNCTION TEMPERATURE
=600V, V
=0/15V, I
COLLECTOR CURRENT
ts
ts
include losses
include losses
15A
C
GE
100°C
=15A, R
=0/15V, R
J
CE
=150°C,
20A
=600V,
G
=56Ω,
G
=56Ω,
25A
150°C
TrenchStop
7
Figure 14. Typical switching energy losses
Figure 16. Typical switching energy losses
®
5 mJ
4 mJ
3 mJ
2 mJ
1 mJ
0 mJ
6mJ
5mJ
4mJ
3mJ
2mJ
1mJ
0mJ
Series
400V
5Ω
E
E
E
V
ts
off
on
*) E
*
CE
*) E
*
due to diode recovery
as a function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
due to diode recovery
as a function of collector emitter
voltage
(inductive load, T
V
Dynamic test circuit in Figure E)
,
on
CE
GE
on
COLLECTOR
500V
and E
and E
=600V, V
=0/15V, I
30Ω
R
G
,
ts
ts
GATE RESISTOR
include losses
include losses
600V
-
C
GE
55Ω
EMITTER VOLTAGE
IGW15T120
=15A, R
=0/15V, I
J
J
=150°C,
=150°C,
700V
Rev. 2.5
G
80Ω
=56Ω,
C
=15A,
800V
105Ω
Nov. 09
E
E
E
off
ts
on
*
*