IHW25N120R2 Infineon Technologies, IHW25N120R2 Datasheet - Page 11

• Manufacturer Part Number: IHW25N120R2
• Description: IGBT 1200V 50A 365W TO247-3
• Manufacturer: Infineon Technologies

Specifications of IHW25N120R2

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 365W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 1.8V
• Power Dissipation Max: 365W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: RC Soft Switching Series 8-60 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 50.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure A. Definition of switching times
Figure B. Definition of switching losses
Soft Switching Series
11
i,v
p(t)
T (t)
j
I
F
Figure C. Definition of diodes
switching characteristics
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
τ
r
IHW25N120R2
1
di /dt
1
r
F
I
r r m
1
τ
r
2
2
r
t
2
S
Q
Q =Q
t =t
S
r r
r r
Rev. 2.3
t
r r
S
Q
S
+
90% I
F
t
+
F
Q
t
F
F
r r m
τ
r
di
10% I
n
n
r r
r
n
Nov. 09
/dt
r r m
V
T
t
R
C