IHW25N120R2 Infineon Technologies, IHW25N120R2 Datasheet - Page 6

• Manufacturer Part Number: IHW25N120R2
• Description: IGBT 1200V 50A 365W TO247-3
• Manufacturer: Infineon Technologies

Specifications of IHW25N120R2

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 365W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 1.8V
• Power Dissipation Max: 365W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: RC Soft Switching Series 8-60 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 50.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 9. Typical switching times as a
Figure 11. Typical switching times as a
100ns
10ns
100ns
10ns
0A
25°C
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
T
10A
CE
GE
J
I
50°C
,
C
,
=600V, V
JUNCTION TEMPERATURE
=0/15V, I
COLLECTOR CURRENT
20A
75°C
30A
C
GE
=25A, R
=0/15V, R
100°C
40A
J
CE
=175°C,
=600V,
G
50A
125°C
=10Ω,
G
=10Ω,
t
d(off)
60A
t
f
150°C
t
Soft Switching Series
f
t
d(off)
70A
6
Figure 10. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as a
1000ns
6V
5V
4V
3V
2V
100ns
-50°C
10Ω
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(I
T
GE
C
20Ω
J
,
= 0.6mA)
=0/15V, I
t
0°C
JUNCTION TEMPERATURE
f
R
G
IHW25N120R2
,
t
30Ω
d(off)
GATE RESISTOR
C
=25A,
40Ω
50°C
J
=175°C, V
50Ω
Rev. 2.3
100°C
60Ω
min.
typ.
CE
=600V,
max.
70Ω
Nov. 09