IHW30N120R2 Infineon Technologies, IHW30N120R2 Datasheet - Page 6

• Manufacturer Part Number: IHW30N120R2
• Description: IGBT 1200V 60A 390W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IHW30N120R2

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 30A
• Current - Collector (ic) (max): 60A
• Power - Max: 390W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 30A
• Collector Emitter Voltage Vces: 1.8V
• Power Dissipation Max: 390W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: RC Soft Switching Series 8-60 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 60.0 A
• Ic(max) @ 100°: 30.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 9. Typical switching times as a
Figure 11. Typical switching times as a
1000ns
1000ns
100ns
100ns
25°C
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
T
20A
CE
GE
J
I
,
C
50°C
,
=600V, V
JUNCTION TEMPERATURE
=0/15V, I
COLLECTOR CURRENT
30A
75°C
C
GE
=30A, R
=0/15V, R
100°C
J
CE
=175°C,
40A
=600V,
G
=28Ω,
125°C
G
=28Ω,
50A
t
Soft Switching Series
d(off)
150°C
t
f
t
d(off)
t
f
6
Figure 10. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as a
1000ns
6V
5V
4V
3V
2V
100ns
-50°C
10Ω
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(I
T
GE
C
t
20Ω
J
f
,
= 0.7mA)
=0/15V, I
0°C
JUNCTION TEMPERATURE
R
t
d(off)
G
IHW30N120R2
,
30Ω
GATE RESISTOR
C
=30A,
40Ω
50°C
J
=175°C, V
50Ω
Rev. 1.5
100°C
60Ω
min.
typ.
CE
=600V,
max.
70Ω
Dec. 09