IHW30N120R2 Infineon Technologies, IHW30N120R2 Datasheet - Page 8

• Manufacturer Part Number: IHW30N120R2
• Description: IGBT 1200V 60A 390W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IHW30N120R2

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 30A
• Current - Collector (ic) (max): 60A
• Power - Max: 390W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 30A
• Collector Emitter Voltage Vces: 1.8V
• Power Dissipation Max: 390W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: RC Soft Switching Series 8-60 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 60.0 A
• Ic(max) @ 100°: 30.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
10V
10
10
10
Figure 17. Typical gate charge
5V
0V
Figure 19. IGBT transient thermal
resistance
(D = t
-1
-2
-3
K/W
K/W
K/W
0nC
p
D=0.5
/ T)
10µs
50nC
0.1
0.2
(I
single pulse
C
=30 A)
0.01
Q
100µs
t
GE
100nC 150nC 200nC 250nC
0.02
P
,
,
PULSE WIDTH
0.05
GATE CHARGE
240V
1ms
R
0.0782
0.1642
0.1158
0.0259
R , ( K / W )
1
C
1
=
τ
1
10ms
/ R
1
C
960V
1.24*10
1.49*10
1.04*10
1.26*10
2
=
τ
100ms
τ
, ( s )
2
/ R
Soft Switching Series
R
2
-1
-2
-3
-4
2
8
Figure 18. Typical capacitance as a function
10
10
100pF
Figure 20. Diode transient thermal
impedance as a function of pulse width
(D=t
-1
-2
1nF
K/W
K/W
P
0V
/T)
V
D=0.5
0.2
0.1
CE
10µs
of collector-emitter voltage
(V
,
COLLECTOR
GE
single pulse
=0V, f = 1 MHz)
t
100µs
0.01
P
IHW30N120R2
,
0.02
PULSE WIDTH
10V
0.05
-
EMITTER VOLTAGE
1ms
R
0.1476
0.1128
0.0885
0.0233
R , ( K / W )
1
C
1
C
=
τ
rss
Rev. 1.5
10ms
1
/ R
20V
1
C
8.51*10
8.37*10
7.14*10
5.96*10
2
100ms
=
τ
τ
, ( s )
2
/ R
Dec. 09
R
2
C
-2
-3
-4
-5
C
2
iss
oss