SGW25N120 Infineon Technologies, SGW25N120 Datasheet
SGW25N120
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SGW25N120 Summary of contents
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... C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s 1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors http://www.infineon.com/igbt Marking off j 2.9mJ SGW25N120 PG-TO-247-3 150°C Symbol jmax 25°C ...
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... V =20V, I =25A =25V =0V f=1MHz =25A =15V ≤1 0 μ =15V ≤1 200 V≤ ≤ 150 ° SGW25N120 Max. Value Unit 0.4 K/W 40 Value Unit min. typ. max. 1200 - - V 2.5 3.1 3.6 - 3.7 4 μ 350 - - 1400 - - 100 2150 2600 pF - 160 190 - 110 ...
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... I =25A =15V/0V 2Ω 80nH, σ =40pF σ Energy losses include “tail” and diode reverse recovery. due to dynamic test circuit in figure E. σ 3 SGW25N120 Value Unit min. typ. max 730 950 - 2.2 2 1.5 2.0 - 3.7 4.9 Value Unit min. typ. max. ...
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... V CE Figure 2. Safe operating area ( 60A 50A 40A 30A 20A 10A 0A 125°C 25°C Figure 4. Collector current as a function of case temperature ≤ 15V SGW25N120 μ μ 50 200 1ms DC 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE ≤ 150°C) = 25° 50° ...
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... V Figure 6. Typical output characteristics (T = 150° 10V 11V -50°C Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SGW25N120 V =17V G E 15V 13V 11V COLLECTOR EMITTER VOLTAGE CE I =50A C I =25A C I =12.5A C 0°C 50°C 100°C 150° ...
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... Figure 10. Typical switching times as a function of gate resistor (inductive load Ω 800V dynamic test circuit in Fig 100°C 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.3mA Ω, 6 SGW25N120 t d(off) t d(on Ω Ω Ω Ω GATE RESISTOR G = 150° +15V/0V 25A max ...
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... Fig 0 K/W 0.02 E off -3 10 K/W 100°C 150°C 1µs Figure 16. IGBT transient thermal impedance as a function of pulse width ( Ω, 7 SGW25N120 *) E and E include losses due to diode recovery off Ω Ω Ω Ω Ω GATE RESISTOR G = 150°C, j ...
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... Figure 18. Typical capacitance as a function of collector-emitter voltage ( 1MHz) GE 500A 400A 300A 200A 100A 0A 10V 14V 15V Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100V≤ SGW25N120 C C oss C 10V 20V 30V , - COLLECTOR EMITTER VOLTAGE 12V 14V 16V 18V ...
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... Power Semiconductors SGW25N120 PG-TO247-3 9 Rev. 2.4 Febr. 08 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors SGW25N120 i Figure C. Definition of diodes switching characteristics τ τ ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance L and stray capacity τ =180nH, σ =40pF. σ Rev. 2.4 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors SGW25N120 11 Rev. 2.4 Febr. 08 ...