SGW25N120 Infineon Technologies, SGW25N120 Datasheet - Page 7

• Manufacturer Part Number: SGW25N120
• Description: IGBT NPT 1200V 46A 313W TO247-3
• Manufacturer: Infineon Technologies

Specifications of SGW25N120

• Package / Case: TO-247-3 (Straight Leads)
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 25A
• Current - Collector (ic) (max): 46A
• Power - Max: 313W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 46 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 46.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGW25N120XK

Power Semiconductors
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
V
dynamic test circuit in Fig.E )
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
V
dynamic test circuit in Fig.E )
25mJ
20mJ
15mJ
10mJ
CE
8mJ
6mJ
4mJ
2mJ
0mJ
GE
5mJ
0mJ
-50°C
= 800V, V
= +15V/0V, I
0A
*) E
due to diode recovery.
*) E
due to diode recovery.
T
I
j
,
on
on
C
JUNCTION TEMPERATURE
,
and E
and E
0°C
COLLECTOR CURRENT
GE
20A
C
= +15V/0V, R
j
CE
ts
ts
= 150°C,
= 25A, R
include losses
include losses
= 800V,
50°C
40A
G
= 22 Ω,
100°C
G
= 2 2 Ω,
60A
150°C
E
E
E
E
on
E
E
on
ts
ts
*
off
off
*
*
*
7
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
V
dynamic test circuit in Fig.E )
10
10
10
10mJ
CE
8mJ
6mJ
4mJ
2mJ
0mJ
-1
-2
-3
K/W
K/W
K/W
= 800V, V
p
0
1µs
Ω
/ T)
0.05
0.02
0.2
0.1
0.01
D=0.5
*) E
due to diode recovery.
10
on
10µs
and E
Ω
R
GE
G
t
p
,
single pulse
= +15V/0V, I
,
j
GATE RESISTOR
ts
= 150°C,
100µs
20
PULSE WIDTH
include losses
SGW25N120
Ω
R
0.07417
0.20899
0.08065
0.03681
30
R , ( K / W )
1ms
1
C
Ω
1
=
C
τ
Rev. 2.4
1
/R
= 25A,
40
10ms 100ms
1
Ω
C
0.4990
0.08994
0.00330
0.00038
2
=
τ
τ
50
E
E
, ( s )
E
2
/R
ts
on
off
Ω
*
*
Febr. 08
R
2
2
1s