IHW40T120 Infineon Technologies, IHW40T120 Datasheet - Page 10

• Manufacturer Part Number: IHW40T120
• Description: IGBT 1200V 75A 270W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IHW40T120

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 40A
• Current - Collector (ic) (max): 75A
• Power - Max: 270W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 40A
• Collector Emitter Voltage Vces: 2.3V
• Power Dissipation Max: 270W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: RC Soft Switching Series 8-60 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 75.0 A
• Ic(max) @ 100°: 40.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
10
10
10
Figure 23. IGBT transient thermal resistance
Figure 23. Typical reverse recovery time as
-1
-2
-3
K/W
K/W
K/W
600ns
500ns
400ns
300ns
200ns
100ns
0ns
10µs
0.05
D=0.5
200A/µs
0.2
0.1
di
(D = t
a function of diode current slope
(V
Dynamic test circuit in Figure E)
F
/dt,
R
100µs
=600V, I
0.01
0.02
single pulse
t
p
DIODE CURRENT SLOPE
400A/µs
P
,
/ T)
PULSE WIDTH
1ms
F
=15A,
R
0.159
0.133
0.120
0.038
R , ( K / W )
1
C
600A/µs
1
=
10ms
1
/ R
1
C
1.10*10
1.56*10
1.35*10
1.51*10
T
800A/µs
2
100ms
=
J
T
=150°C
, ( s )
2
J
=25°C
/ R
Soft Switching Series
R
2
-1
-2
-3
-4
2
10
Figure 24. Diode transient thermal
Figure 24. Typical reverse recovery charge
10
10
10
3µC
2µC
1µC
0µC
-1
-2
0
K/W
K/W
K/W
200A/µs
10µs
D=0.5
0.2
0.1
di
impedance as a function of pulse
width
(D=t
as a function of diode current
slope
(V
Dynamic test circuit in Figure E)
F
/dt,
R
0.01
=600V, I
single pulse
100µs
0.02
P
400A/µs
/T)
t
DIODE CURRENT SLOPE
P
0.05
,
PULSE WIDTH
F
=15A,
1ms
IHW40T120
600A/µs
R
0.2113
0.2922
0.3666
0.2248
R , ( K / W )
1
C
1
=
10ms
1
Rev. 2.3 Sep 08
/ R
1
800A/µs
T
C
J
T
7.23*10
8.13*10
1.09*10
1.55*10
2
=150°C
100ms
=
J
=25°C
, ( s )
2
/ R
R
2
-2
-3
-3
-4
2