IHW40T120 Infineon Technologies, IHW40T120 Datasheet - Page 11

• Manufacturer Part Number: IHW40T120
• Description: IGBT 1200V 75A 270W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IHW40T120

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 40A
• Current - Collector (ic) (max): 75A
• Power - Max: 270W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 40A
• Collector Emitter Voltage Vces: 2.3V
• Power Dissipation Max: 270W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: RC Soft Switching Series 8-60 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 75.0 A
• Ic(max) @ 100°: 40.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
30A
25A
20A
15A
10A
40A
30A
20A
10A
Figure 25. Typical reverse recovery current
Figure 27. Typical diode forward current as
5A
0A
0A
200A/µs
0V
di
as a function of diode current
slope
(V
Dynamic test circuit in Figure E)
a function of forward voltage
F
/dt,
V
R
=600V, I
F
400A/µs
,
DIODE CURRENT SLOPE
FORWARD VOLTAGE
1V
F
=15A,
600A/µs
T
J
=25°C
150°C
2V
T
800A/µs
T
J
=150°C
J
=25°C
Soft Switching Series
11
Figure 26. Typical diode peak rate of fall of
Figure 28. Typical diode forward voltage as a
-300A/µs
-200A/µs
-100A/µs
2,0V
1,5V
1,0V
0,5V
0,0V
-0A/µs
I
F
=30A
200A/µs
-50°C
15A
8A
5A
di
reverse recovery current as a
function of diode current slope
(V
Dynamic test circuit in Figure E)
function of junction temperature
T
F
J
/dt,
R
,
=600V, I
JUNCTION TEMPERATURE
DIODE CURRENT SLOPE
400A/µs
0°C
F
=15A,
IHW40T120
600A/µs
50°C
Rev. 2.3 Sep 08
100°C
800A/µs
T
T
J
=150°C
J
=25°C